ITO-Schottky photodiodes for high-performance detection in the UV-IR spectrum

• Published in: IEEE journal of selected topics in quantum electronics Vol. 10; no. 4; pp. 759 - 765
• Main Authors: Biyikli, N., Kimukin, I., Butun, B., Aytur, O., Ozbay, E.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-07-2004; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Conducting materials; Detectors; Gold; Indium tin oxide; Optical fibers; Optical films; Photodetectors; Photodiodes; Resonance; Schottky barriers
• ISSN: 1077-260X; 1558-4542
• DOI: 10.1109/JSTQE.2004.833977

High-performance vertically illuminated Schottky photodiodes with indium-tin-oxide (ITO) Schottky layers were designed, fabricated, and tested. Ternary and quarternary III-V material systems (AlGaN-GaN, AlGaAs-GaAs, InAlGaAs-InP, and InGaAsP-InP) were utilized for detection in the ultraviolet (UV) (/spl lambda/<400 nm), near-IR (/spl lambda//spl sim/850 nm), and IR (/spl lambda//spl sim/1550 nm) spectrum. The material properties of thin ITO films were characterized. Using resonant-cavity-enhanced (RCE) detector structures, improved efficiency performance was achieved. Current-voltage, spectral responsivity, and high-speed measurements were carried out on the fabricated ITO-Schottky devices. The device performances obtained with different material systems are compared.