Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 110; no. 3; pp. 251 - 255
• Main Authors: Halidou, I, Benzarti, Z, Boufaden, T, El Jani, B, Juillaguet, S, Ramonda, M
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 25-07-2004; Elsevier
• Subjects: AFM; Condensed Matter; Materials Science; MOVPE; Photoluminescence; Physics; Reflectivity; SiN treatment; Reflectivity; AFM; MOVPE; SiN treatment; Photoluminescence; YELLOW LUMINESCENCE; THIN-FILMS; photoluminescence; CHEMICAL-VAPOR-DEPOSITION; UNDOPED GAN; OPTICAL-PROPERTIES; reflectivity; DISLOCATION DENSITY; OVERGROWTH; REDUCTION; GAN/SAPPHIRE; SURFACE
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/j.mseb.2004.02.002

In this paper, the influence of silane flow on metalorganic vapour phase epitaxy (MOVPE) grown GaN on sapphire substrate by an in situ SiN treatment has been investigated. A flow of 10
sccm with treatment duration of 120
s appears to be the optimal value and improves the crystal quality. The dislocation density, determined by atomic force microscopic (AFM), is as low as 5×10
8
cm
−2. A reduction of I
2 full width at half maximum (FWHM) to 4
meV and an increase of both BE/YL and BE/DAP intensity ratio are also obtained.