Low-energy electron-enhanced etching of HgCdTe
Low-energy electron-enhanced etching (LE4) is applied to HgCdTe to eliminate ion-induced surface damage. First, LE4 results for patterned samples are illustrated. The LE4 mechanism is understood from a mechanistic study in terms of three etch variables: direct current (DC) bias, gas composition, and...
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| Published in: | Journal of electronic materials Vol. 32; no. 7; pp. 677 - 685 |
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| Main Authors: | , , , , , , , |
| Format: | Conference Proceeding Journal Article |
| Language: | English |
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New York, NY
Institute of Electrical and Electronics Engineers
01-07-2003
Springer Nature B.V |
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| Abstract | Low-energy electron-enhanced etching (LE4) is applied to HgCdTe to eliminate ion-induced surface damage. First, LE4 results for patterned samples are illustrated. The LE4 mechanism is understood from a mechanistic study in terms of three etch variables: direct current (DC) bias, gas composition, and sample temperature. For this paper, the effects of DC bias (electron energy) and gas composition (CH4 concentration) are summarized qualitatively, followed by quantitative evidence. Etch rate, the amount of polymer, surface stoichiometry, and surface roughness have specific relations with each etch variable under competition between pure LE4 and polymer deposition. 15 refs. |
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| AbstractList | Low-energy electron-enhanced etching (LE4) is applied to HgCdTe to eliminate ion-induced surface damage. First, LE4 results for patterned samples are illustrated. The LE4 mechanism is understood from a mechanistic study in terms of three etch variables: direct current (DC) bias, gas composition, and sample temperature. For this paper, the effects of DC bias (electron energy) and gas composition (CH4 concentration) are summarized qualitatively, followed by quantitative evidence. Etch rate, the amount of polymer, surface stoichiometry, and surface roughness have specific relations with each etch variable under competition between pure LE4 and polymer deposition. Low-energy electron-enhanced etching (LE4) is applied to HgCdTe to eliminate ion-induced surface damage. First, LE4 results for patterned samples are illustrated. The LE4 mechanism is understood from a mechanistic study in terms of three etch variables: direct current (DC) bias, gas composition, and sample temperature. For this paper, the effects of DC bias (electron energy) and gas composition (CH4 concentration) are summarized qualitatively, followed by quantitative evidence. Etch rate, the amount of polymer, surface stoichiometry, and surface roughness have specific relations with each etch variable under competition between pure LE4 and polymer deposition. 15 refs. |
| Author | JAEHWA KIM KOGA, T. S VARESI, John B GILLIS, H. P GOORSKY, Mark S JOHNSON, Scott M GARWOOD, Gerald A RHIGER, David R |
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| Cites_doi | 10.1063/1.367389 10.1007/BF02655019 10.1007/BF01447258 10.1063/1.114000 10.1063/1.115876 10.1063/1.115371 10.1007/s11664-999-0231-7 10.1007/BF02653068 10.1017/CBO9780511623172 10.1063/1.119159 10.1007/s11664-997-0168-7 10.1116/1.581988 |
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| Keywords | Patterning Anisotropic etching Roughness Electron beam Etching Epitaxial film Experimental study Surface treatment Inorganic compound Low energy Microelectronic fabrication low-energy electron-enhanced etching (LE4) Transition metal compounds II-VI semiconductors Cadmium tellurides Plasma etching Molecular beam epitaxy Mercury tellurides CH4/H2/N2/Ar HgCdTe MESA technology Photoresist |
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| References | H.P. Gillis (52_CR10) 1996; 68 E.P.G. Smith (52_CR1) 1999; 17 E.P.G. Smith (52_CR2) 1998; 83 J.R. Jensen (52_CR15) 1992; 12 R.C. Keller (52_CR5) 1996; 25 R.C. Keller (52_CR4) 1995; 67 D.P. Woodruff (52_CR14) 1994 C.R. Eddy Jr. (52_CR6) 1999; 28 A.Y. Wong (52_CR13) 1977 J.F. Siliquini (52_CR3) 1997; 70 H.P. Gillis (52_CR9) 1997; 26 H.P. Gillis (52_CR11) 1995; 66 52_CR8 52_CR7 R.C. Keller (52_CR12) 1995; 24 |
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| Snippet | Low-energy electron-enhanced etching (LE4) is applied to HgCdTe to eliminate ion-induced surface damage. First, LE4 results for patterned samples are... |
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| SubjectTerms | Applied sciences Cross-disciplinary physics: materials science; rheology Electronics Exact sciences and technology Lithography, masks and pattern transfer Materials science Microelectronic fabrication (materials and surfaces technology) Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges Plasma applications Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Surface cleaning, etching, patterning Surface treatments |
| Title | Low-energy electron-enhanced etching of HgCdTe |
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