The effect of Ar plasma on the space-confined growth of MoS2 with low-pressure chemical vapor deposition

Plasma assisted low-pressure chemical vapor deposition has previously been shown to allow for large area growth of a variety of 2D materials, such as graphene and boron nitride. However, it also presented with degradation of electronic properties owing to decreases in grain sizes and increased inclu...

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Bibliographic Details

Published in:	AIP advances Vol. 13; no. 6
Main Authors:	Pokhrel, Himal, Duncan, Joseph Anthony, Woli, Yagya Bahadur, Hoang, Thang Ba, Pollard, Shawn David
Format:	Journal Article
Language:	English
Published:	Melville American Institute of Physics 01-06-2023
Subjects:	Argon plasma Boron nitride Chemical vapor deposition Crystal defects Grain size Graphene Low pressure Molybdenum disulfide Morphology Nonuniformity Plasma Precursors Raman spectroscopy Single crystals Two dimensional materials
Online Access:	Get full text
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