Electronic properties of clean unreconstructed 6H–SiC(0 0 0 1) surfaces studied by angle resolved photoelectron spectroscopy

• Published in: Surface science Vol. 600; no. 18; pp. 3845 - 3850
• Main Authors: Emtsev, K.V., Seyller, Th, Ley, L., Tadich, A., Broekman, L., Riley, J.D., Leckey, R.C.G., Preuss, M.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 15-09-2006; Amsterdam Elsevier Science; New York, NY
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electronic structure; Exact sciences and technology; Mott–Hubbard metal–insulator transition; Photoelectron spectroscopy; Photon-induced desorption; Physics; Silicon carbide; Electronic structure; Photon-induced desorption; Silicon carbide; Mott–Hubbard metal–insulator transition; Photoelectron spectroscopy; Photon stimulated desorption; Angular resolution; Metal-insulator transition; Silicon carbides; Hubbard model; Mott-Hubbard metal-insulator transition
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/j.susc.2006.01.094

The properties of the clean and unreconstructed 6H–SiC(0
0
0
1) and 6H–SiC
(
0
0
0
1
¯
)
surfaces were investigated by means of angle-resolved photoelectron spectroscopy (ARPES). These highly metastable surfaces were prepared by exposing hydrogen terminated surfaces to a high flux of synchrotron radiation. On both surfaces we find a band of surface states with 1
×
1 periodicity assigned to unsaturated Si and C dangling bonds located at 0.8
eV and 0.2
eV above the valence band maximum, respectively. Both states are located below the Fermi level. The dispersion of the surface bands amounts to 0.2
eV for the Si derived band and 0.7
eV for C derived band. It is suggested that the electronic properties of these surfaces are governed by strong correlation effects (Mott–Hubbard metal insulator transition). The results for the (0
0
0
1) surface are directly compared to Si-rich (√3
×
√3)
R30° reconstructed surface. Distinct differences in electronic structure of the (√3
×
√3)
R30° and 1
×
1 surfaces are observed.