Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors
By using gating technique, surface leakage generated by SiO2 passivation in long-wavelength infrared type-II superlattice photodetector is suppressed, and different surface leakage mechanisms are disclosed. By reducing the SiO2 passivation layer thickness, the saturated gated bias is reduced to -4.5...
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| Published in: | Applied physics letters Vol. 101; no. 21 |
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| Main Authors: | , , , , , |
| Format: | Journal Article |
| Language: | English |
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19-11-2012
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| Abstract | By using gating technique, surface leakage generated by SiO2 passivation in long-wavelength infrared type-II superlattice photodetector is suppressed, and different surface leakage mechanisms are disclosed. By reducing the SiO2 passivation layer thickness, the saturated gated bias is reduced to -4.5 V. At 77 K, dark current densities of gated devices are reduced by more than 2 orders of magnitude, with 3071 Omega cm2 differential-resistance-area product at -100 mV. With quantum efficiency of 50%, the 11 mu m 50% cut-off gated photodiode has a specific detectivity of 7 1011 Jones, and the detectivity stays above 2 1011 Jones from 0 to -500 mV operation bias. |
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| AbstractList | By using gating technique, surface leakage generated by SiO2 passivation in long-wavelength infrared type-II superlattice photodetector is suppressed, and different surface leakage mechanisms are disclosed. By reducing the SiO2 passivation layer thickness, the saturated gated bias is reduced to -4.5 V. At 77 K, dark current densities of gated devices are reduced by more than 2 orders of magnitude, with 3071 Omega cm2 differential-resistance-area product at -100 mV. With quantum efficiency of 50%, the 11 mu m 50% cut-off gated photodiode has a specific detectivity of 7 1011 Jones, and the detectivity stays above 2 1011 Jones from 0 to -500 mV operation bias. By using gating technique, surface leakage generated by SiO2 passivation in long-wavelength infrared type-II superlattice photodetector is suppressed, and different surface leakage mechanisms are disclosed. By reducing the SiO2 passivation layer thickness, the saturated gated bias is reduced to −4.5 V. At 77 K, dark current densities of gated devices are reduced by more than 2 orders of magnitude, with 3071 Ω cm2 differential-resistance-area product at −100 mV. With quantum efficiency of 50%, the 11μm 50% cut-off gated photodiode has a specific detectivity of 7 × 1011 Jones, and the detectivity stays above 2 × 1011 Jones from 0 to −500 mV operation bias. |
| Author | Darvish, S. R. Chen, G. Razeghi, M. Huang, E. K. Hoang, A. M. Bogdanov, S. |
| Author_xml | – sequence: 1 givenname: G. surname: Chen fullname: Chen, G. – sequence: 2 givenname: E. K. surname: Huang fullname: Huang, E. K. – sequence: 3 givenname: A. M. surname: Hoang fullname: Hoang, A. M. – sequence: 4 givenname: S. surname: Bogdanov fullname: Bogdanov, S. – sequence: 5 givenname: S. R. surname: Darvish fullname: Darvish, S. R. – sequence: 6 givenname: M. surname: Razeghi fullname: Razeghi, M. |
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| SubjectTerms | Bias Density Gating and risering Infrared Leakage Passivation Photodetectors Silicon dioxide |
| Title | Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors |
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