Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors

We have systematically studied the origin of high gate-leakage currents in AlGaN/GaN high electron mobility transistors (HEMTs). Devices that initially had a low gate-leakage current (good devices) are compared with ones that had a high gate-leakage current (bad devices). The apparent zero-bias Scho...

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Bibliographic Details

Published in:	Microelectronics and reliability Vol. 88-90; pp. 393 - 396
Main Authors:	Sasangka, W.A., Gao, Y., Gan, C.L., Thompson, C.V.
Format:	Journal Article
Language:	English
Published:	Elsevier Ltd 01-09-2018
Subjects:	AlGaN/GaN HEMTs Carbon impurities EELS Leakage current Schottky barrier height TEM AlGaN/GaN HEMTs Carbon impurities Leakage current Schottky barrier height TEM EELS
Online Access:	Get full text
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