Endotaxial silicide nanowires: A review

• Published in: Thin solid films Vol. 519; no. 24; pp. 8434 - 8440
• Main Authors: Bennett, P.A., He, Zhian, Smith, David J., Ross, F.M.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 03-10-2011; Elsevier
• Subjects: Cross-disciplinary physics: materials science; rheology; Dynamical systems; Dynamics; Endotaxy; Epitaxy; Exact sciences and technology; Intermetallics; Materials science; Methods of nanofabrication; Nanoscale materials and structures: fabrication and characterization; Nanowire; Nanowires; Nickel; Physics; Quantum wires; Rare earth metals; Self-assembly; Silicide; Silicides; Titanium; Nanowire; Silicide; Epitaxy; Endotaxy; Crystal orientation; Silicides; Theoretical study; Iron; Crystallographic plane; Self-assembly; Reviews; Mismatch lattice; Growth mechanism; Titanium; Nickel; Silicon; Crystal faces; Nanowires; Nanostructured materials; Crystal structure
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2011.05.034

We review the topic of self-assembled endotaxial silicide nanowires on silicon. Crystallographic orientation, lattice mismatch and average dimensions are discussed for a variety of systems including Ti, Mn, Fe, Co, Ni, Pt and several rare earths on Si(100), Si(111) and Si(110) surfaces.
In situ observations of growth dynamics support a constant-shape growth model, in which length, width and thickness all change in proportion as the nanowire grows, with thermally activated, facet-dependent rates.