Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition

Etching rate of technologically important metal oxide thin films in hot sulphuric acid was investigated. The films of Al-, Ti-, Cr-, and Ta-oxides studied were grown by atomic layer deposition (ALD) method on silicon substrates from different precursors in large ranges of growth temperatures (80–900...

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Bibliographic Details
Published in:	Thin solid films Vol. 542; pp. 219 - 224
Main Authors:	Sammelselg, Väino, Netšipailo, Ivan, Aidla, Aleks, Tarre, Aivar, Aarik, Lauri, Asari, Jelena, Ritslaid, Peeter, Aarik, Jaan
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier B.V 02-09-2013 Elsevier
Subjects:	Atomic layer deposition Corrosion resistance Cross-disciplinary physics: materials science; rheology Crystal structure Deposition Etching Exact sciences and technology Materials science Metal oxide coatings Metal oxides Methods of deposition of films and coatings; film growth and epitaxy Physics Precursors Silicon substrates Theory and models of film growth Thin films Vapor phase epitaxy; growth from vapor phase Wet chemical etching X-ray fluorescence spectroscopy X-ray fluorescence spectroscopy Atomic layer deposition Wet chemical etching Metal oxide coatings Atomic layer method X ray fluorescence Crystallization Etching rate Crystal growth from vapors Chemical etching Coatings Precursor Thin films Metallic thin films Residual impurity Growth mechanism Chromium Titanium
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