Holmium titanium oxide thin films grown by atomic layer deposition

Thin solid holmium titanium oxide films were grown by atomic layer deposition at 300°C on silicon substrates. The precursors used were Ho(thd)3, Ti(OCH(CH3)2)4 and O3. The composition of the films was varied via changing the holmium–titanium ratio by variation of relative amounts of the sequential d...

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Published in:	Thin solid films Vol. 565; pp. 261 - 266
Main Authors:	Kukli, Kaupo, Kemell, Marianna, Dimri, Mukesh Chandra, Puukilainen, Esa, Tamm, Aile, Stern, Raivo, Ritala, Mikko, Leskelä, Markku
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier B.V 28-08-2014 Elsevier
Subjects:	Atomic layer deposition Cross-disciplinary physics: materials science; rheology Crystal growth Crystallization Deposition Exact sciences and technology Holmium Magnetic materials Materials science Methods of deposition of films and coatings; film growth and epitaxy Oxides Physics Thin films Titanium Titanium dioxide Titanium oxides Vapor phase epitaxy; growth from vapor phase Crystal growth Atomic layer deposition Magnetic materials Atomic layer method Annealing Amorphous thin film Crystal growth from vapors Precursor Thin films Magnetometry Titanium Titanium oxide Saturation magnetization
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Abstract	Thin solid holmium titanium oxide films were grown by atomic layer deposition at 300°C on silicon substrates. The precursors used were Ho(thd)3, Ti(OCH(CH3)2)4 and O3. The composition of the films was varied via changing the holmium–titanium ratio by variation of relative amounts of the sequential deposition cycles of constituent oxides, i.e. Ho2O3 and TiO2. The constituent oxides alone were crystallized in as-deposited states. After mixing the Ho2O3 or TiO2 layers the films were amorphous but were crystallized after annealing at 800–1000°C, mostly transforming into the Ho2Ti2O7 phase. The stoichiometric ratio of 1:1 between Ti and Ho contents was achieved by application of at least twice as many Ho2O3 deposition cycles as TiO2 cycles. Magnetometry revealed that saturation magnetization could be observed in the films containing lower amounts of holmium compared to titanium. •Holmium-doped TiO2 and holmium titanates were deposited by ALD.•Crystallization temperature increased with the Ho:Ti ratio.•Holmium titanate films possessed pyrochlore phase.•The films could demonstrate saturative magnetization.
AbstractList	Thin solid holmium titanium oxide films were grown by atomic layer deposition at 300 degree C on silicon substrates. The precursors used were Ho(thd)3, Ti(OCH(CH3)2)4 and O3. The composition of the films was varied via changing the holmium-titanium ratio by variation of relative amounts of the sequential deposition cycles of constituent oxides, i.e. Ho2O3 and TiO2. The constituent oxides alone were crystallized in as-deposited states. After mixing the Ho2O3 or TiO2 layers the films were amorphous but were crystallized after annealing at 800-1000 degree C, mostly transforming into the Ho2Ti2O7 phase. The stoichiometric ratio of 1:1 between Ti and Ho contents was achieved by application of at least twice as many Ho2O3 deposition cycles as TiO2 cycles. Magnetometry revealed that saturation magnetization could be observed in the films containing lower amounts of holmium compared to titanium. Thin solid holmium titanium oxide films were grown by atomic layer deposition at 300°C on silicon substrates. The precursors used were Ho(thd)3, Ti(OCH(CH3)2)4 and O3. The composition of the films was varied via changing the holmium–titanium ratio by variation of relative amounts of the sequential deposition cycles of constituent oxides, i.e. Ho2O3 and TiO2. The constituent oxides alone were crystallized in as-deposited states. After mixing the Ho2O3 or TiO2 layers the films were amorphous but were crystallized after annealing at 800–1000°C, mostly transforming into the Ho2Ti2O7 phase. The stoichiometric ratio of 1:1 between Ti and Ho contents was achieved by application of at least twice as many Ho2O3 deposition cycles as TiO2 cycles. Magnetometry revealed that saturation magnetization could be observed in the films containing lower amounts of holmium compared to titanium. •Holmium-doped TiO2 and holmium titanates were deposited by ALD.•Crystallization temperature increased with the Ho:Ti ratio.•Holmium titanate films possessed pyrochlore phase.•The films could demonstrate saturative magnetization.
Author	Ritala, Mikko Leskelä, Markku Stern, Raivo Kukli, Kaupo Tamm, Aile Puukilainen, Esa Kemell, Marianna Dimri, Mukesh Chandra
Author_xml	– sequence: 1 givenname: Kaupo surname: Kukli fullname: Kukli, Kaupo email: kaupo.kukli@helsinki.fi, kaupo.kukli@ut.ee organization: University of Helsinki, Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki, Finland – sequence: 2 givenname: Marianna surname: Kemell fullname: Kemell, Marianna organization: University of Helsinki, Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki, Finland – sequence: 3 givenname: Mukesh Chandra surname: Dimri fullname: Dimri, Mukesh Chandra organization: National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn, Estonia – sequence: 4 givenname: Esa surname: Puukilainen fullname: Puukilainen, Esa organization: University of Helsinki, Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki, Finland – sequence: 5 givenname: Aile surname: Tamm fullname: Tamm, Aile organization: University of Tartu, Institute of Physics, Department of Materials Science, Ravila 14c, EE-50411 Tartu, Estonia – sequence: 6 givenname: Raivo surname: Stern fullname: Stern, Raivo organization: National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn, Estonia – sequence: 7 givenname: Mikko surname: Ritala fullname: Ritala, Mikko organization: University of Helsinki, Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki, Finland – sequence: 8 givenname: Markku surname: Leskelä fullname: Leskelä, Markku organization: University of Helsinki, Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki, Finland
BackLink	http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28697430$$DView record in Pascal Francis
BookMark	eNp9kDFPwzAQhS1UJNrCD2DLgsSScHYSxxETVECRKrHAbDnOBVwldrFdoP-eVK0Yme6G772792ZkYp1FQi4pZBQov1lnMXQZA1pkwDNg4oRMqajqlFU5nZApQAEphxrOyCyENQBQxvIpuV-6fjDbIYkmKrtf3I9pMYkfxiad6YeQvHv3bZNml6joBqOTXu3QJy1uXDDROHtOTjvVB7w4zjl5e3x4XSzT1cvT8-JuleqcQ0xV1TQMhCqKCppGQYF5W2jsVKNp2ZRFKWrklDeMIlZCgcZWVZxSEIIJ6Lp8Tq4PvhvvPrcYohxM0Nj3yqLbBkk5H1NyKMWI0gOqvQvBYyc33gzK7yQFue9LruXYl9z3JYHLsa9Rc3W0V0GrvvPKahP-hEzwuipyGLnbA4dj1i-DXgZt0I7vGo86ytaZf678AgtXghc
CODEN	THSFAP
CitedBy_id	crossref_primary_10_1016_j_microrel_2014_07_067 crossref_primary_10_1088_1361_6641_aa78ce crossref_primary_10_1016_j_matt_2020_07_031 crossref_primary_10_1016_j_tsf_2015_08_027 crossref_primary_10_1116_1_4902079 crossref_primary_10_1016_j_ceramint_2018_12_029 crossref_primary_10_1063_5_0172732 crossref_primary_10_1063_5_0023466 crossref_primary_10_29233_sdufeffd_1237412 crossref_primary_10_1016_j_mssp_2017_06_037 crossref_primary_10_1103_PhysRevLett_118_207206
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ContentType	Journal Article
Copyright	2014 Elsevier B.V. 2015 INIST-CNRS
Copyright_xml	– notice: 2014 Elsevier B.V. – notice: 2015 INIST-CNRS
DBID	IQODW AAYXX CITATION 7SR 7U5 8BQ 8FD JG9 L7M
DOI	10.1016/j.tsf.2014.06.028
DatabaseName	Pascal-Francis CrossRef Engineered Materials Abstracts Solid State and Superconductivity Abstracts METADEX Technology Research Database Materials Research Database Advanced Technologies Database with Aerospace
DatabaseTitle	CrossRef Materials Research Database Engineered Materials Abstracts Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace METADEX
DatabaseTitleList	Materials Research Database
DeliveryMethod	fulltext_linktorsrc
Discipline	Engineering Physics
EISSN	1879-2731
EndPage	266
ExternalDocumentID	10_1016_j_tsf_2014_06_028 28697430 S0040609014006725
GroupedDBID	--K --M -~X .DC .~1 0R~ 123 1B1 1RT 1~. 1~5 4.4 457 4G. 5VS 7-5 71M 8P~ 9JN AABNK AABXZ AACTN AAEDT AAEDW AAEPC AAIAV AAIKJ AAKOC AALRI AAOAW AAQFI AAXUO ABFNM ABFRF ABJNI ABMAC ABNEU ABXDB ABXRA ABYKQ ACBEA ACDAQ ACFVG ACGFO ACGFS ACRLP ADBBV ADEZE AEBSH AEFWE AEKER AENEX AEZYN AFKWA AFRZQ AFTJW AGHFR AGUBO AGYEJ AHHHB AIEXJ AIKHN AITUG AIVDX AJBFU AJOXV ALMA_UNASSIGNED_HOLDINGS AMFUW AMRAJ AXJTR BKOJK BLXMC CS3 DU5 EBS EFJIC EFLBG EJD EO8 EO9 EP2 EP3 F5P FDB FIRID FNPLU FYGXN G-Q GBLVA IHE J1W KOM M24 M38 M41 MAGPM MO0 N9A O-L O9- OAUVE OGIMB OZT P-8 P-9 P2P PC. Q38 RNS ROL RPZ SDF SDG SDP SES SPC SPCBC SPD SSM SSQ SSZ T5K TWZ WH7 ZMT ~G- 29Q 6TJ 8W4 AALMO AAQXK AAYJJ ABPIF ABPTK ABQIS ACNNM ADALY AFFNX ASPBG AVWKF AZFZN BBWZM FEDTE FGOYB G-2 G8K HMV HVGLF HX~ HZ~ IPNFZ IQODW NDZJH R2- RIG SEW SMS SPG VOH WUQ XFK AAXKI AAYXX ABDPE ADMUD AFJKZ AKRWK CITATION 7SR 7U5 8BQ 8FD JG9 L7M
ID	FETCH-LOGICAL-c360t-a7bb208a4470bba04e3d4cefabc15b54589e616b21ee78a0ceda7611088280ff3
ISSN	0040-6090
IngestDate	Sat Oct 26 01:21:14 EDT 2024 Thu Nov 21 20:39:07 EST 2024 Thu Nov 24 18:33:20 EST 2022 Fri Feb 23 02:14:20 EST 2024
IsPeerReviewed	true
IsScholarly	true
Keywords	Crystal growth Atomic layer deposition Magnetic materials Atomic layer method Annealing Amorphous thin film Crystal growth from vapors Precursor Thin films Magnetometry Titanium Titanium oxide Saturation magnetization
Language	English
License	CC BY 4.0
LinkModel	OpenURL
MergedId	FETCHMERGED-LOGICAL-c360t-a7bb208a4470bba04e3d4cefabc15b54589e616b21ee78a0ceda7611088280ff3
Notes	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
PQID	1660046058
PQPubID	23500
PageCount	6
ParticipantIDs	proquest_miscellaneous_1660046058 crossref_primary_10_1016_j_tsf_2014_06_028 pascalfrancis_primary_28697430 elsevier_sciencedirect_doi_10_1016_j_tsf_2014_06_028
PublicationCentury	2000
PublicationDate	2014-08-28
PublicationDateYYYYMMDD	2014-08-28
PublicationDate_xml	– month: 08 year: 2014 text: 2014-08-28 day: 28
PublicationDecade	2010
PublicationPlace	Amsterdam
PublicationPlace_xml	– name: Amsterdam
PublicationTitle	Thin solid films
PublicationYear	2014
Publisher	Elsevier B.V Elsevier
Publisher_xml	– name: Elsevier B.V – name: Elsevier
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SSID	ssj0001223
Score	2.2211359
Snippet	Thin solid holmium titanium oxide films were grown by atomic layer deposition at 300°C on silicon substrates. The precursors used were Ho(thd)3, Ti(OCH(CH3)2)4... Thin solid holmium titanium oxide films were grown by atomic layer deposition at 300 degree C on silicon substrates. The precursors used were Ho(thd)3,...
SourceID	proquest crossref pascalfrancis elsevier
SourceType	Aggregation Database Index Database Publisher
StartPage	261
SubjectTerms	Atomic layer deposition Cross-disciplinary physics: materials science; rheology Crystal growth Crystallization Deposition Exact sciences and technology Holmium Magnetic materials Materials science Methods of deposition of films and coatings; film growth and epitaxy Oxides Physics Thin films Titanium Titanium dioxide Titanium oxides Vapor phase epitaxy; growth from vapor phase
Title	Holmium titanium oxide thin films grown by atomic layer deposition
URI	https://dx.doi.org/10.1016/j.tsf.2014.06.028 https://search.proquest.com/docview/1660046058
Volume	565
hasFullText	1
inHoldings	1
isFullTextHit
isPrint
link	http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwtV3_a9QwFA-3DUER0ak4v4wI_uRxo0nTpP1xupOpTIRN2G8laVPtbtc71iu4_973krbXeSgq-Esp6eUS8j55eS_vGyGvrLZwslg9sUlhJiIvGOw5nsC-MjxLJD7Ront8qj6dx0dTMR2Nmk7r79v-K6WhDWiNkbN_Qe3-T6EB3oHm8ASqw_OP6I4xBmUzH2PwWIUvi-9lbkG-LCtMwjSvx19R80axE_Rt9Iy_1NeuTHjnvzWUV7Gs5xgmXOa-89ryM_Nx1R91s1ysufa8NWOcgAquq6rn-Ufl3Ie0nzQzW39zQQ35Vf_5c9PMyksNEq-_Dqr18DaCCbxebaO73RXZRpiMZ7sYYxD4uqAH1nPaWCUYF8SGrDiS0ZCZ-jTt7bnMfXWWDZbvbx8uDla1y8gqXDrWdko3M2mf4jxwGqBUogU62iI7HPgTsMedw_fT8w_9Ec44790tsUNnDneOgT8N9CuB5u5S17DNCl8fZeOod_LL2X1yr1U86KFHzAMystUuuTNIR7lLbjl34Kx-SN60KKIdiqhDEUUUUQcE6lBEzTX1KKIORXSNokfky7vp2dvjSVttY5KFMlhNtDKGB7EWQgXG6EDYMBeZLbTJWGTQvppYyaThzFoV6yCzuVYSo0hAaQ-KInxMtqtFZZ8QanOrEsWDRCVaGJYnUagjVkgltVJxGO-R192SpUufVCXtvA0vUljfFNc3RY9LDj8W3aKmrVTopb0UEPC7bvs3CNAPxGMJOnQY7JGXHUVSYKloJ9OVXTR1yqT0MdXx038b-xm5vd4bz8n26qqxL8hWnTf7LdJ-AP0tmms
link.rule.ids	315,782,786,27933,27934
linkProvider	Elsevier
openUrl	ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Holmium+titanium+oxide+thin+films+grown+by+atomic+layer+deposition&rft.jtitle=Thin+solid+films&rft.au=Kukli%2C+Kaupo&rft.au=Kemell%2C+Marianna&rft.au=Dimri%2C+Mukesh+Chandra&rft.au=Puukilainen%2C+Esa&rft.date=2014-08-28&rft.pub=Elsevier+B.V&rft.issn=0040-6090&rft.eissn=1879-2731&rft.volume=565&rft.spage=261&rft.epage=266&rft_id=info:doi/10.1016%2Fj.tsf.2014.06.028&rft.externalDocID=S0040609014006725
thumbnail_l	http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0040-6090&client=summon
thumbnail_m	http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0040-6090&client=summon
thumbnail_s	http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0040-6090&client=summon