Tilt investigation of In(Al,Ga)As metamorphic buffer layers on GaAs (001) substrate: A novel technique for tilt determination

Crystallographic tilt and Surface topography of InGaAs and InAlAs based metamorphic buffer structures on GaAs (001) substrate grown by molecular beam epitaxy (MBE) under varying growth conditions have been investigated. Compressively strained metamorphic buffer layers show anisotropic strain relaxat...

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Published in:Crystal research and technology (1979) Vol. 51; no. 12; pp. 723 - 729
Main Authors: Kumar, Rahul, Biswas, Dhrubes
Format: Journal Article
Language:English
Published: Blackwell Publishing Ltd 01-12-2016
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Summary:Crystallographic tilt and Surface topography of InGaAs and InAlAs based metamorphic buffer structures on GaAs (001) substrate grown by molecular beam epitaxy (MBE) under varying growth conditions have been investigated. Compressively strained metamorphic buffer layers show anisotropic strain relaxation. A novel tilt determination technique based on X‐ray diffraction has been developed which can separate the effect of anisotropic strain. Tilt has been found to depend on compositional grading scheme, growth temperature and surface irregularities. Samples having random surfaces show smaller tilt than that of samples showing regular cross‐hatch. At higher growth temperature, reduction of tilt has been observed and correlated with thermal activation of otherwise inactive slip systems at low temperature. At low temperature and also for continuously graded samples, reduction of tilt has been observed and correlated with the slower relaxation that provide the opportunity for all the slip systems to participate and compete. Crystallographic tilt and surface topography of the In(Al,Ga)As metamorphic buffers on GaAs (001) have been investigated. A novel tilt determination technique based on x‐ray diffraction has been developed which can separate the effect of anisotropic strain. Tilt has been found to depend on compositional grading scheme, growth temperature and surface irregularities. Random surfaces, very high and very low growth temperatures have been found effective to reduce tilt.
Bibliography:Department of Electronics and Information Technology
ark:/67375/WNG-5VB94QHX-D
ENS
istex:BD0B5A4B0EB2FD2745BED450C4E2C56CABFE710A
ArticleID:CRAT201600149
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0232-1300
1521-4079
DOI:10.1002/crat.201600149