Properties of fluorinated silica glass deposited at low temperature by atmospheric plasma-enhanced chemical vapor deposition

The atmospheric pressure plasma-enhanced chemical vapor deposition of fluorinated silica glass was demonstrated at a temperature of 120 °C. The process was carried out by simultaneously feeding tetramethylcyclotetrasiloxane (TMCTS) and triethoxyfluorosilane (TEOFS) into the afterglow of helium and o...

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Bibliographic Details
Published in:	Thin solid films Vol. 519; no. 4; pp. 1307 - 1313
Main Authors:	Barankin, Michael D., Williams, Thomas S., Gonzalez, Eleazar, Hicks, Robert F.
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier B.V 01-12-2010 Elsevier
Subjects:	Afterglows Atmospheric pressure plasma Atmospherics Chemical vapor deposition Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Coatings Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science; rheology Exact sciences and technology Fluorinated silicon oxide Fluorination Materials science Methods of deposition of films and coatings; film growth and epitaxy Optical properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics Plasma-enhanced chemical vapor deposition Precursors Refractive index Silica glass Silicon Structure and morphology; thickness Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Vapor phase epitaxy; growth from vapor phase Atmospheric pressure plasma Fluorinated silicon oxide Optical properties Refractive index Plasma-enhanced chemical vapor deposition Atmospheric pressure Growth rate Fluorine Roughness Glass Organic silane Coatings Precursor Silica Thin films Vapor deposition Afterglow Plasma-enhanced chemical Silicon oxides Silicon PECVD Porosity
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