X-ray lithography for ⩽ 100  nm ground rules in complex patterns

Complex patterns with 75–125 nm feature sizes exposed with x-ray lithography are shown. Lithographic results for 75–125 nm lines with varying pitch are compared to simulations of image formation and resist dissolution, showing good qualitative agreement. Exposure dose latitude, nested-to-isolated pr...

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Bibliographic Details

Published in:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Vol. 15; no. 6; pp. 2517 - 2521
Main Authors:	Hector, Scott, Pol, Victor, Krasnoperova, Azalia, Maldonado, Juan, Flamholz, Alex, Heald, Dave, Stahlhammer, Carl, Galburt, Dan, Amodeo, Ralph, Donohue, Tom, Wind, Shalom, Buchigniano, James, Viswanathan, Raman, Khan, Mumit, Bollepalli, Srinivas, Cerrina, Franco
Format:	Conference Proceeding
Language:	English
Published:	01-11-1997
Online Access:	Get full text
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