Layerwise reaction at a buried interface

• Published in: Physical review letters Vol. 69; no. 17; pp. 2539 - 2542
• Main Authors: BENNETT, P. A, DEVRIES, B, ROBINSON, I. K, ENG, P. J
• Format: Journal Article
• Language: English
• Published: Ridge, NY American Physical Society 26-10-1992
• Subjects: 665100 - Nuclear Techniques in Condensed Matter Physics - (1992-); Applied sciences; BREMSSTRAHLUNG; COHERENT SCATTERING; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Condensed matter: structure, mechanical and thermal properties; CRYSTAL GROWTH; DIFFRACTION; ELECTROMAGNETIC RADIATION; EPITAXY; Exact sciences and technology; IN-SITU PROCESSING; INTERFACES; Metals. Metallurgy; PALLADIUM COMPOUNDS; PALLADIUM SILICIDES; Physics; PROCESSING; RADIATIONS; RELAXATION; SCATTERING; SILICIDES; SILICON COMPOUNDS; Solid surfaces and solid-solid interfaces; STRESS RELAXATION; Surface structure and topography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); SYNCHROTRON RADIATION; TRANSITION ELEMENT COMPOUNDS; X-RAY DIFFRACTION; Thickness; Commensurate phase; Critical value; Solid solid interface; Growth interface; Growth mechanism; Transition metal; Palladium; Silicon; Experimental study; X ray diffraction; Synchrotron radiation
• ISSN: 0031-9007; 1079-7114
• DOI: 10.1103/PhysRevLett.69.2539

X-ray diffraction was used to monitor the {ital in} {ital situ} reaction of Pd deposited on Si(111) at room temperature. An ordered silicide forms spontaneously beneath a poorly ordered overlayer. It is commensurate and strained at low coverage, but relaxes to an unstrained state above a critical thickness of 18 A. During both phases of growth sustained intensity oscillations are seen that correspond to a layerwise consumption of the substrate at the buried interface.