The effect of annealing temperature on the electrical properties of metal-ferroelectric (PbZr 0.53Ti 0.47O 3)-insulator (ZrO 2)-semiconductor (MFIS) thin-film capacitors

• Published in: Microelectronic engineering Vol. 84; no. 9; pp. 2014 - 2017
• Main Authors: Juan, P.C., Jiang, J.D., Shih, W.C., Lee, J.Y.M.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-09-2007; Elsevier Science
• Subjects: Applied sciences; Conduction mechanism; Dielectric, amorphous and glass solid devices; Electronics; Exact sciences and technology; Ferroelectric memory; Integrated circuits; Integrated circuits by function (including memories and processors); Memory window; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Zirconium oxide; Conduction mechanism; Zirconium oxide; Ferroelectric memory; Memory window; Thin film device; Annealing; Semiconductor thin films; Oxide layer; Dielectric materials; Temperature effect; Annealing temperature; Ferroelectric properties; ferroelectric memory; Thin film; Thin film capacitor; Ferroelectric materials; MFIS structure; Leakage current; Poole Frenkel effect; memory window; conduction mechanism; Ferroelectric storage; zirconium oxide; Electrical characteristic
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2007.04.004

Metal-ferroelectric-insulator-semiconductor (MFIS) thin-film structures using PbZr
0.53Ti
0.47O
3 (PZT) as the ferroelectric layer and zirconium oxide (ZrO
2) as the insulator layer were fabricated in this work. The leakage current and the C-V memory window were measured for MFIS capacitors with the PZT layer annealed at temperatures of 400 °C, 500 °C, 600 °C, 700 °C. The dominant conduction mechanism of Al/PZT(290 nm)/ZrO
2(15 nm)/Si structure is Poole-Frenkel emission in the temperature range of 300-425 K. Under a sweep voltage of 6 V, the largest memory window of 1.31 V was obtained for 500 °C-annealed samples. The memory window as a function of insulator thickness was also discussed. More serious charge injection is observed when the voltage was swept from negative to positive.