Carbon occupancy of interstitial sites in vanadium carbide films deposited by direct current reactive magnetron sputtering
Vanadium carbide thin films were deposited on Si substrates by direct current reactive magnetron sputtering from a V target in Ar/CH 4 plasma, varying the Ar/CH 4 partial pressure ratio and substrate temperature. The films were characterized by glancing angle X-ray diffraction and Rutherford backsca...
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| Published in: | Thin solid films Vol. 517; no. 24; pp. 6493 - 6496 |
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| Abstract | Vanadium carbide thin films were deposited on Si substrates by direct current reactive magnetron sputtering from a V target in Ar/CH
4 plasma, varying the Ar/CH
4 partial pressure ratio and substrate temperature. The films were characterized by glancing angle X-ray diffraction and Rutherford backscattering spectrometry. Well defined crystalline structures were obtained for CH
4 content higher than 13%. The increase of substrate temperature during deposition diminishes the film thickness slightly while diminishing substantially the C/V atomic ratio. The intensity ratio of the Bragg peaks (111)/(200) decreases for increasing substrate temperature. This result is discussed in terms of a proposed mechanism for interstitial diffusion of carbon atoms in vanadium carbide thin films with fcc-like crystalline structure and the temperature dependence of carbon occupancy of tetrahedral or octahedral interstitial sites. |
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| AbstractList | Vanadium carbide thin films were deposited on Si substrates by direct current reactive magnetron sputtering from a V target in Ar/CH
4 plasma, varying the Ar/CH
4 partial pressure ratio and substrate temperature. The films were characterized by glancing angle X-ray diffraction and Rutherford backscattering spectrometry. Well defined crystalline structures were obtained for CH
4 content higher than 13%. The increase of substrate temperature during deposition diminishes the film thickness slightly while diminishing substantially the C/V atomic ratio. The intensity ratio of the Bragg peaks (111)/(200) decreases for increasing substrate temperature. This result is discussed in terms of a proposed mechanism for interstitial diffusion of carbon atoms in vanadium carbide thin films with fcc-like crystalline structure and the temperature dependence of carbon occupancy of tetrahedral or octahedral interstitial sites. Vanadium carbide thin films were deposited on Si substrates by direct current reactive magnetron sputtering from a V target in Ar/CH(4) plasma, varying the Ar/CH(4) partial pressure ratio and substrate temperature. The films were characterized by glancing angle X-ray diffraction and Rutherford backscattering spectrometry. Well defined crystalline structures were obtained for CH(4) content higher than 13%. The increase of substrate temperature during deposition diminishes the film thickness slightly while diminishing substantially the C/V atomic ratio. The intensity ratio of the Bragg peaks (111)/(200) decreases for increasing substrate temperature. This result is discussed in terms of a proposed mechanism for interstitial diffusion of carbon atoms in vanadium carbide thin films with fcc-like crystalline structure and the temperature dependence of carbon occupancy of tetrahedral or octahedral interstitial sites. |
| Author | Soares, G.V. Portolan, E. Figueroa, C.A. Perottoni, C.A. Aguzzoli, C. Amorim, C.L.G. Baumvol, I.J.R. |
| Author_xml | – sequence: 1 givenname: E. surname: Portolan fullname: Portolan, E. organization: Centro de Ciências Exatas e Tecnologia, Universidade de Caxias do Sul, Caxias do Sul, 95070-560, Brazil – sequence: 2 givenname: C.L.G. surname: Amorim fullname: Amorim, C.L.G. organization: Centro de Ciências Exatas e Tecnologia, Universidade de Caxias do Sul, Caxias do Sul, 95070-560, Brazil – sequence: 3 givenname: G.V. surname: Soares fullname: Soares, G.V. organization: Centro de Ciências Exatas e Tecnologia, Universidade de Caxias do Sul, Caxias do Sul, 95070-560, Brazil – sequence: 4 givenname: C. surname: Aguzzoli fullname: Aguzzoli, C. organization: Centro de Ciências Exatas e Tecnologia, Universidade de Caxias do Sul, Caxias do Sul, 95070-560, Brazil – sequence: 5 givenname: C.A. surname: Perottoni fullname: Perottoni, C.A. organization: Centro de Ciências Exatas e Tecnologia, Universidade de Caxias do Sul, Caxias do Sul, 95070-560, Brazil – sequence: 6 givenname: I.J.R. surname: Baumvol fullname: Baumvol, I.J.R. organization: Centro de Ciências Exatas e Tecnologia, Universidade de Caxias do Sul, Caxias do Sul, 95070-560, Brazil – sequence: 7 givenname: C.A. surname: Figueroa fullname: Figueroa, C.A. email: cafiguer@ucs.br organization: Centro de Ciências Exatas e Tecnologia, Universidade de Caxias do Sul, Caxias do Sul, 95070-560, Brazil |
| BackLink | http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21914915$$DView record in Pascal Francis |
| BookMark | eNp9kEuLFDEUhYOMYM_oD3CXzbir9uZRj-BKGnUGBtzoOqSSmyFNVaomSTW0v940Pbh0dSB851zy3ZKbuEQk5CODPQPWfT7uS_Z7DqD2IGryN2THhl41vBfshuwAJDQdKHhHbnM-AgDjXOzIn4NJ4xLpYu22mmjPdPE0xIIpl1CCmWgOBXN9oicTjQvbTG2tBIfUh2nO1OG6XBhHxzN1IaEt1G4pYSw0obElnJDO5jliSfVQXrdS10N8fk_eejNl_PCad-T392-_Dg_N088fj4evT40V7VAaNYwMnWLWOT-qYZBDa42UknvugLctZ0OHknEYO_Cges9Z37WjFU60rVSjuCOfrrtrWl42zEXPIVucJhNx2bIWUvWgur6C7AratOSc0Os1hdmks2agL5b1UVfL-mJZg6jJa-f-ddxkayafqsOQ_xU5U0wq1lbuy5XD-tNTwKSzDRgtXo1pt4T_XPkLkziWOg |
| CODEN | THSFAP |
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| ContentType | Journal Article |
| Copyright | 2009 Elsevier B.V. 2009 INIST-CNRS |
| Copyright_xml | – notice: 2009 Elsevier B.V. – notice: 2009 INIST-CNRS |
| DBID | IQODW AAYXX CITATION 7SR 7U5 8BQ 8FD JG9 L7M |
| DOI | 10.1016/j.tsf.2009.03.202 |
| DatabaseName | Pascal-Francis CrossRef Engineered Materials Abstracts Solid State and Superconductivity Abstracts METADEX Technology Research Database Materials Research Database Advanced Technologies Database with Aerospace |
| DatabaseTitle | CrossRef Materials Research Database Engineered Materials Abstracts Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace METADEX |
| DatabaseTitleList | Materials Research Database |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering Physics |
| EISSN | 1879-2731 |
| EndPage | 6496 |
| ExternalDocumentID | 10_1016_j_tsf_2009_03_202 21914915 S0040609009006841 |
| GroupedDBID | --K --M -~X .DC .~1 0R~ 123 1B1 1RT 1~. 1~5 29Q 4.4 457 4G. 5VS 6TJ 7-5 71M 8P~ 9JN AABNK AABXZ AACTN AAEDT AAEDW AAEPC AAIAV AAIKJ AAKOC AALRI AAOAW AAQFI AAQXK AAXUO AAYJJ ABFNM ABFRF ABJNI ABMAC ABNEU ABXDB ABXRA ABYKQ ACBEA ACDAQ ACFVG ACGFO ACGFS ACNNM ACRLP ADBBV ADEZE ADMUD AEBSH AEFWE AEKER AENEX AEZYN AFFNX AFKWA AFRZQ AFTJW AGHFR AGUBO AGYEJ AHHHB AIEXJ AIKHN AITUG AIVDX AJBFU AJOXV ALMA_UNASSIGNED_HOLDINGS AMFUW AMRAJ ASPBG AVWKF AXJTR AZFZN BBWZM BKOJK BLXMC CS3 DU5 EBS EFJIC EFLBG EJD EO8 EO9 EP2 EP3 F5P FDB FEDTE FGOYB FIRID FNPLU FYGXN G-2 G-Q G8K GBLVA HMV HVGLF HX~ HZ~ IHE J1W KOM M24 M38 M41 MAGPM MO0 N9A NDZJH O-L O9- OAUVE OGIMB OZT P-8 P-9 P2P PC. Q38 R2- RIG RNS ROL RPZ SDF SDG SDP SES SEW SMS SPC SPCBC SPD SPG SSM SSQ SSZ T5K TWZ VOH WH7 WUQ XFK ZMT ~G- ABPIF ABPTK IQODW AAXKI AAYXX AFJKZ AKRWK CITATION 7SR 7U5 8BQ 8FD JG9 L7M |
| ID | FETCH-LOGICAL-c358t-98b1ed91cddfb988485ca4442f2d02552186e4120b60f097f21765bc3d35549b3 |
| ISSN | 0040-6090 |
| IngestDate | Fri Oct 25 10:36:44 EDT 2024 Thu Sep 26 16:22:57 EDT 2024 Sun Oct 29 17:10:04 EDT 2023 Fri Feb 23 02:31:20 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 24 |
| Keywords | Reactive magnetron sputtering Vanadium carbide Interstitial carbon Phase transition Methane Temperature dependence RBS XRD Carbon Layer thickness Phase transitions Thin films Cathode sputtering Partial pressure Physical vapor deposition Reactive sputtering Diffusion Sputter deposition Crystal structure |
| Language | English |
| License | CC BY 4.0 |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c358t-98b1ed91cddfb988485ca4442f2d02552186e4120b60f097f21765bc3d35549b3 |
| Notes | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| PQID | 34970967 |
| PQPubID | 23500 |
| PageCount | 4 |
| ParticipantIDs | proquest_miscellaneous_34970967 crossref_primary_10_1016_j_tsf_2009_03_202 pascalfrancis_primary_21914915 elsevier_sciencedirect_doi_10_1016_j_tsf_2009_03_202 |
| PublicationCentury | 2000 |
| PublicationDate | 2009-10-30 |
| PublicationDateYYYYMMDD | 2009-10-30 |
| PublicationDate_xml | – month: 10 year: 2009 text: 2009-10-30 day: 30 |
| PublicationDecade | 2000 |
| PublicationPlace | Amsterdam |
| PublicationPlace_xml | – name: Amsterdam |
| PublicationTitle | Thin solid films |
| PublicationYear | 2009 |
| Publisher | Elsevier B.V Elsevier |
| Publisher_xml | – name: Elsevier B.V – name: Elsevier |
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| SSID | ssj0001223 |
| Score | 2.0971913 |
| Snippet | Vanadium carbide thin films were deposited on Si substrates by direct current reactive magnetron sputtering from a V target in Ar/CH
4 plasma, varying the... Vanadium carbide thin films were deposited on Si substrates by direct current reactive magnetron sputtering from a V target in Ar/CH(4) plasma, varying the... |
| SourceID | proquest crossref pascalfrancis elsevier |
| SourceType | Aggregation Database Index Database Publisher |
| StartPage | 6493 |
| SubjectTerms | Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science; rheology Deposition by sputtering Diffusion; interface formation Exact sciences and technology Interstitial carbon Materials science Methods of deposition of films and coatings; film growth and epitaxy Phase transition Physics Reactive magnetron sputtering Solid surfaces and solid-solid interfaces Structure and morphology; thickness Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Vanadium carbide |
| Title | Carbon occupancy of interstitial sites in vanadium carbide films deposited by direct current reactive magnetron sputtering |
| URI | https://dx.doi.org/10.1016/j.tsf.2009.03.202 https://search.proquest.com/docview/34970967 |
| Volume | 517 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwtV3Nb9MwFLdKJyQQQjBAdMDwgRNVosT5so9TKQyEuHSg3aI4dqZWalM17YH-9XvPdpKOAQIkpCpJrSZO-n75vWf7fRDyhutKRlpzT2c88uI4Fl7By8gro6iSQnIRGC_f81n25ZK_m8bTwaCtvde3_VdJQxvIGiNn_0La3UWhAY5B5rAFqcP2j-Q-KTYSbUCTPRjDKl1OiA06BZjokPnWOGFhxd5CzXdLzE4t50pjjqZlg76x6MhlLVOr8caly-IEFqbhx_GyuFppnEUfN2tT6rrVgIsWfdABPOhc2at2DAzWPgym7aSP36FtWW9sVeeJ_9n_0LXPaoyOMlP3_rf-11e7_b62Yd0T_8a0hTB8H_RzabfiaSw_YzBCYAuI-tpSMs8EBhCFh5yd2IBPB04WH1BwGtuSi06dw9f0p6rCzlos_G1TubSlEexZrxc7b8UZ3hbeFX5SjmkSjhjwWjIkR2cfp5efOtUfMta5aeIJ7TK6cSj8oaNfGUIP1kUDr2dl66rcMhGM3XPxiDx0AxZ6ZpH2mAz06pjcP0hjeUzuGjfisnlC9hZ9tEMfrSt6iD5q0AdNtEUfdeijBie0Qx-V36lFH3Xooy36aIc-2qPvKfn6fnoxOfdcdQ_ggYRvPcFlqJUIS6WAFTiPeVIWQBasYgoHulgsTcchC2QaVIHIKhg8p4ksI4UmspDRMzJc1Sv9nNBAhyyLNRhbRQSKX4kiVbLMVIJr3jIrR-Rt-1fna5vEJW-9Gxc5yAWLsYo8iGDPRiRuhZE7K9Q-bQ7I-d1ppzcE13XEMIOiCJMRed1KMgcKx3W5YqXrXZNHscgCkWYn_9bzC3Kvf8FekuF2s9OvyJ1G7U4dPq8BwSnBnA |
| link.rule.ids | 315,782,786,27935,27936 |
| linkProvider | Elsevier |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Carbon+occupancy+of+interstitial+sites+in+vanadium+carbide+films+deposited+by+direct+current+reactive+magnetron+sputtering&rft.jtitle=Thin+solid+films&rft.au=Portolan%2C+E.&rft.au=Amorim%2C+C.L.G.&rft.au=Soares%2C+G.V.&rft.au=Aguzzoli%2C+C.&rft.date=2009-10-30&rft.pub=Elsevier+B.V&rft.issn=0040-6090&rft.eissn=1879-2731&rft.volume=517&rft.issue=24&rft.spage=6493&rft.epage=6496&rft_id=info:doi/10.1016%2Fj.tsf.2009.03.202&rft.externalDocID=S0040609009006841 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0040-6090&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0040-6090&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0040-6090&client=summon |