Comparison of La-based high- k dielectrics: HfLaSiON and HfLaON

• Published in: Microelectronic engineering Vol. 86; no. 3; pp. 268 - 271
• Main Authors: Choi, Won-Ho, Han, In-Shik, Kwon, Hyuk-Min, Goo, Tae-Gyu, Na, Min-Ki, Yoo, Ook-Sang, Lee, Ga-Won, Kang, Chang Yong, Choi, Rino, Song, Seung Chul, Lee, Byoung Hun, Jammy, Raj, Jeong, Yoon-Ha, Lee, Hi-Deok
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-03-2009; Elsevier
• Subjects: Applied sciences; Device performance; Electronics; Exact sciences and technology; HfLaON; HfLaSiON; High- k; Hot carrier; Materials; PBTI; Reliability; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; PBTI; HfLaSiON; Hot carrier; Device performance; HfLaON; Reliability; High- k; Thermal stress; Performance evaluation; Voltage threshold; MOSFET; Electric stress; Transistor gate; Durability; Lanthanum Nitrides oxides; Electron traps; Charge carrier trapping; Carrier lifetime; Hafnium Nitrides oxides; High k dielectric; High-κ; Silicon Nitrides oxides; Activation energy; Comparative study; Damaging
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2008.04.008

For the first time, we present a comparative study on HfLaSiON and HfLaON gate dielectric with an equivalent oxide thickness (EOT) of 0.8
nm (
T
inv
=
1.2
nm). A detailed DC analysis of
I
on vs.
I
off shows HfLaON performs somewhat better than HfLaSiON. However, positive bias temperature instability (PBTI) lifetime of HfLaSiON is higher than HfLaON by about 2 orders of magnitude. On the other hand, hot carrier stress lifetime for HfLaSiON was similar to that of HfLaON. From the activation energy and U-trap, we found that the cause of different threshold voltage (
V
T) shifts under PBT stress and detrapping was originated from stable electron traps induced by different charge trapping rates.