Sodium diffusion in 4H-SiC

Sodium diffusion in 4H-SiC

Sodium diffusion has been studied in p-type 4H-SiC. Heat treatments have been performed from 1200 °C to 1800 °C for 1 min to 4 h. Secondary ion mass spectrometry has been used to measure the sodium distribution. We show that sodium has a considerable mobility at 1200 °C in p-type 4H-SiC. On the othe...

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Bibliographic Details
Published in:APL materials Vol. 2; no. 9; pp. 096106 - 096106-7
Main Authors: Linnarsson, M. K., Hallén, A.
Format: Journal Article
Language:English
Published: United States AIP Publishing LLC 01-09-2014
Subjects:
ACTIVATION ENERGY
DIFFUSION
HEAT TREATMENTS
MASS SPECTROSCOPY
MATERIALS SCIENCE
MOBILITY
SILICON CARBIDES
SODIUM
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Summary:Sodium diffusion has been studied in p-type 4H-SiC. Heat treatments have been performed from 1200 °C to 1800 °C for 1 min to 4 h. Secondary ion mass spectrometry has been used to measure the sodium distribution. We show that sodium has a considerable mobility at 1200 °C in p-type 4H-SiC. On the other hand for sodium atoms trapped at suitable sites the mobility is limited up to 1800 °C. Trap limited diffusion kinetics is suggested and an effective diffusivity has been extracted with an activation energy of 4 eV for sodium diffusion in p-type 4H-SiC.
ISSN:2166-532X
2166-532X
DOI:10.1063/1.4895040