Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 45; no. 4; pp. 431 - 435
• Main Authors: Samsonenko, Yu. B., Cirlin, G. E., Khrebtov, A. I., Bouravleuv, A. D., Polyakov, N. K., Ulin, V. P., Dubrovskii, V. G., Werner, P.
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 01-04-2011; Springer
• Subjects: CRYSTALS; Diffusion; Epitaxy; FABRICATION; Gallium arsenide; GALLIUM ARSENIDES; Growth; Magnetic Materials; Magnetism; MATERIALS SCIENCE; MOLECULAR BEAM EPITAXY; Nanotechnology; Nonelectronic Properties of Semiconductors (Atomic Structure; Physics; Physics and Astronomy; QUANTUM WIRES; SUBSTRATES; SURFACES; TEMPERATURE DEPENDENCE; Toy industry; WIRES; Reflection High Energy Electron Diffraction; Reflection High Energy Electron Diffraction Pattern; Typical Scanning Electron Microscopy Image; Molecular Beam Epitaxy; GaAs
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782611040191

The processes of growth of self-catalyzed GaAs crystal nanowires on Si (111) surfaces modified by three different methods are studied. For the technology of production of the GaAs nanowires, molecular-beam epitaxy is used. It is found that, in the range of substrate temperatures between 610 and 630°C, the surface density of nanowires and their diameter sharply increases, whereas the temperature dependence of the nanowire length exhibits a maximum at 610°C. An increase in the temperature to 640°C suppresses the formation of nanowires. The method that provides a means for the fabrication of purely cubic GaAs nanowires is described. A theoretical justification of the formation of the cubic phase in self-catalyzed GaAs nanowires is presented.