Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 52; no. 4; pp. 489 - 492
• Main Authors: Mozharov, A. M., Vasiliev, A. A., Bolshakov, A. D., Sapunov, G. A., Fedorov, V. V., Cirlin, G. E., Mukhin, I. S.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-04-2018; Springer; Springer Nature B.V
• Subjects: 2017. Transport In Heterostructures; Gallium nitrides; Gunn effect; Indium gallium nitrides; June 26–30; Magnetic Materials; Magnetism; Mathematical models; Nanowires; Nitrides; Physics; Physics and Astronomy; Saint Petersburg; Security devices; Volt-ampere characteristics; XXV International Symposium “Nanostructures: Physics and Technology”
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782618040231

In this work we have studied volt-ampere characteristics of single core-shell GaN/InGaN/GaN nanowire. It was experimentally shown that negative differential resistance effect can be obtained in the studied heterostructure. On the base of numerical calculation results the model describing negative differential resistance phenomenon was proposed. We assume this effect to be related with strong localization of current flow inside the nanowire and emergence of Gunn effect in this area.