Specific features of photoluminescence properties of copper-doped cadmium selenide quantum dots

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 45; no. 9; pp. 1173 - 1176
• Main Authors: Tselikov, G. I., Dorofeev, S. G., Tananaev, P. N., Timoshenko, V. Yu
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 01-09-2011; Springer
• Subjects: Analysis; CADMIUM; COPPER; Copper industry; DOPED MATERIALS; ELECTRONIC STRUCTURE; IMPURITIES; KINETICS; Low-Dimensional Systems; Magnetic Materials; Magnetism; MATERIALS SCIENCE; PHOTOLUMINESCENCE; Physics; Physics and Astronomy; QUANTUM DOTS; Quantum Phenomena; RELAXATION; Semiconductor Structures; Nonexponential Character; Undoped CdSe; Photoluminescence Property; Copper Atom
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782611090223

The effect of doping with copper on the photoluminescence properties of cadmium selenide quantum dots 4 nm in dimension is studied. The quenching of the excitonic photoluminescence band related to the quantum dots and the appearance of an impurity photoluminescence band in the near-infrared region are observed after doping of the quantum dots with copper. It is established that, on doping of the quantum dots, the photoluminescence kinetics undergoes substantial changes. The photoluminescence kinetics of the undoped quantum dots is adequately described by a sum of exponential relaxation relations, whereas the photoluminescence kinetics experimentally observed in the region of the impurity band of the copper-doped samples follows stretched exponential decay, with the average lifetimes 0.3–0.6 μs at the photon energies in the range of 1.47–1.82 eV. The experimentally observed changes in the photoluminescence properties are attributed to transformation of radiative centers in the quantum dots when doped with copper atoms.