Liquid-metal field electron source based on porous GaP

• Published in: Technical physics Vol. 62; no. 9; pp. 1424 - 1430
• Main Authors: Masalov, S. A., Popov, E. O., Kolos’ko, A. G., Filippov, S. V., Ulin, V. P., Evtikhiev, V. P., Atrashchenko, A. V.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-09-2017; Springer; Springer Nature B.V
• Subjects: Classical and Continuum Physics; Emission; Explosions; Gallium; Lasers; Nuclear physics; Physical Electronics; Physics; Physics and Astronomy; Semiconductors (Materials); Voltage pulses
• ISSN: 1063-7842; 1090-6525
• DOI: 10.1134/S1063784217090171

We have reported on a new method for obtaining a liquid-metal field emitter. The treatment of a porous crystal of GaP binary semiconducting compound with high-voltage pulses in a vacuum has made it possible to obtain stable structures on its surface in the form of discrete gallium clusters. These structures exhibit high emission properties, including stable currents at a level of a few microamperes, as well as the high uniformity of the distribution of emission nanocenters over the surface.