Temperature scaling in the quantum-Hall-effect regime in a HgTe quantum well with an inverted energy spectrum

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 49; no. 12; pp. 1545 - 1549
• Main Authors: Arapov, Yu. G., Gudina, S. V., Neverov, V. N., Podgornykh, S. M., Popov, M. R., Harus, G. I., Shelushinina, N. G., Yakunin, M. V., Mikhailov, N. N., Dvoretsky, S. A.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-12-2015; Springer
• Subjects: 2015; CADMIUM TELLURIDES; Electric properties; ENERGY SPECTRA; HALL EFFECT; MAGNETIC FIELDS; Magnetic Materials; Magnetism; MAGNETORESISTANCE; March 10–14; MATERIALS SCIENCE; MERCURY; MERCURY TELLURIDES; Nizhny Novgorod; PHASE TRANSFORMATIONS; Physics; Physics and Astronomy; QUANTUM WELLS; TEMPERATURE DEPENDENCE; XIX Symposium “Nanophysics and Nanoelectronics”; Landau Level; Delocalized State; HgTe; Quantum Phase Transition; Quantum Hall Effect
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782615120039

The longitudinal and Hall magnetoresistances of HgTe/HgCdTe heterostructures with an inverted energy spectrum (the HgTe quantum well width is
d
= 20.3 nm) are measured in the quantum-Hall-effect regime at
T
= 2–50 K in magnetic fields up to
B
= 9 T. Analysis of the temperature dependences of conductivity in the transition region between the first and second plateaus of the quantum Hall effect shows the feasibility of the scaling regime for a plateau–plateau quantum phase transition in 2D-structures on the basis of mercury telluride.