High quality molecular beam epitaxial regrowth of ZnSe on Se-modified (100) GaAs surfaces

• Published in: Japanese Journal of Applied Physics Vol. 30; no. 3; pp. 447 - 450
• Main Authors: TURCO-SANDROFF, F. S, SANDROFF, C. J, RAVI, T. S, HWANG, D. M
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01-03-1991
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Epitaxy; Molecular beam; Zinc Selenides; Experimental study; Inorganic compound; Passivation; Surface
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.30.447

We show that high quality MBE regrowth of ZnSe can be achieved on (100) GaAs surfaces that have been passivated outside the regrowth chamber with aqueous selenides. Good epitaxial regrowth of ZnSe on these Se-modified GaAs surfaces could be seen by reflection high energy electron diffraction and lattice images obtained by transmission electron microscopy reveal GaAs/ZnSe interfaces free of structural defects. We also show that these regrown interfaces are of high electronic quality with photoluminescence intensity measurements. The relatively low regrowth temperatures (270 and 350°C) combined with the wide band gap of ZnSe should make our scheme attractive for regrowth on many GaAs-based devices.