In-Ga-Zn-O MESFET with transparent amorphous Ru-Si-O Schottky barrier

Rectifying transparent amorphous Ru–Si–O Schottky contacts to In–Ga–Zn–O have been fabricated by means of reactive sputtering without any annealing processes nor semiconductor surface treatments. The ideality factor, effective Schottky barrier height and rectification ratio are equal to 1.6, 0.9 eV...

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Bibliographic Details

Published in:	Physica status solidi. PSS-RRL. Rapid research letters Vol. 8; no. 7; pp. 625 - 628
Main Authors:	Kaczmarski, Jakub, Grochowski, Jakub, Kaminska, Eliana, Taube, Andrzej, Jung, Wojciech, Piotrowska, Anna
Format:	Journal Article
Language:	English
Published:	Berlin WILEY-VCH Verlag 01-07-2014 WILEY‐VCH Verlag Wiley Subscription Services, Inc
Subjects:	amorphous oxide semiconductors In−Ga−Zn−O metal−semiconductor field-effect transistors Schottky barriers Semiconductors Solid state physics Transistors transparent electronics
Online Access:	Get full text
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