Temperature dependence of pure CsI: scintillation light yield and decay time

• Published in: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 480; no. 2; pp. 494 - 500
• Main Authors: Amsler, C, Grögler, D, Joffrain, W, Lindelöf, D, Marchesotti, M, Niederberger, P, Pruys, H, Regenfus, C, Riedler, P, Rotondi, A
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 21-03-2002
• Subjects: Decay time; Light yield; Pure CsI scintillator; Temperature dependence; Temperature dependence; Light yield; Decay time; 29.40.M; Pure CsI scintillator
• ISSN: 0168-9002; 1872-9576
• DOI: 10.1016/S0168-9002(01)01239-6

The temperature dependence of the light emission for pure CsI crystals has been measured with photomultipliers, and photodiodes with wavelength shifters from 80–
300
K
. The light yield at
80
K
is
N
γ=50,000±5000 photons/MeV. This number was deduced from the number of electron–hole pairs produced in the photodiode,
N
eh=39,600±1200. The light yield at room temperature is lower by a factor of 15.8±1.0, giving 3200±400 photons/MeV. Decay times were measured with a photomultiplier. At room temperature two fast decay components were observed with decay times of 6±1 and
28±2
ns
. Below
180
K
only one component is observed and at
80
K
the decay time is
1015±17
ns
.