Low Voltage a-IGZO Thin Film Transistor Using Tantalum Oxide by Thermal Oxidation

• Published in: Electronic materials letters Vol. 20; no. 2; pp. 102 - 110
• Main Authors: Yu, Eun Seong, Kim, Seung Gyun, Kang, Seo Jin, Lee, Hyuk Su, Lee, Jong Mo, Moon, Seung Jae, Bae, Byung Seong
• Format: Journal Article
• Language: English
• Published: Seoul The Korean Institute of Metals and Materials 01-03-2024; Springer Nature B.V; 대한금속·재료학회
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Condensed Matter Physics; Indium gallium zinc oxide; Low voltage; Magnetics and Photonics; Materials Science; Nanotechnology; Nanotechnology and Microengineering; Optical and Electronic Materials; Original Article - Electronics; Oxidation; Photoelectrons; Semiconductor devices; Tantalum; Tantalum oxides; Thin film transistors; Threshold voltage; X ray photoelectron spectroscopy; 전자/정보통신공학; Low voltage; a-IGZO TFT; Tantalum oxide; Thermal oxidation
• ISSN: 1738-8090; 2093-6788
• DOI: 10.1007/s13391-023-00431-6

Low voltage oxide thin-film transistors (TFTs) operating below 1.0 V were developed using a high dielectric constant tantalum oxide produced by thermal oxidation. Thermal oxidation was carried out at 400, 500 and 600 °C under an oxygen atmosphere. The tantalum oxide was evaluated by X-ray photoelectron spectroscopy (XPS). XPS confirmed the binding energy of Ta4f, indicating the binding state of tantalum oxide. The bottom gate oxide TFT with the gate insulator of tantalum oxide grown at 500 °C exhibited mobility of 26.7 cm
2
/V s and a threshold voltage of 1.3 V. The transfer characteristics at the drain voltages below 1.0 V show its applicability to low voltage operation below 1 V. The bootstrapped inverter with developed oxide TFTs operated well at the 1.0 and 2.0 V operation voltages.
Graphical Abstract