Radiation Sensor Compatible With Standard CMOS Technology

• Published in: IEEE transactions on nuclear science Vol. 56; no. 5; pp. 2910 - 2915
• Main Authors: Garcia Moreno, E., Picos, R., Isern, E., Roca, M., Bota, S., Suenaga, K.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-10-2009; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Charge carrier processes; CMOS; CMOS technology; Compatibility; Digital; Dosimeters; Electric potential; Electron traps; Gamma dosimeter; Integrated circuit technology; MOSFET circuits; MOSFET sensors; Nuclear electronics; Paper technology; Radiation effects; Silicon; Voltage
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2008.2011804

This paper presents a gamma radiation dosimeter built in a standard 0.35 mum CMOS technology. The dosimeter, which occupies 300 times 150 mum times mum of silicon area, gives a digital output signal of frequency proportional to the total dose. Experimental results up to 1.5 Mrads are presented. Measured low dose radiation responsivity is 84.7 Hz/Krad and sensitivity to temperature and supply voltage are 1.43 kHz/degC and 20.9 kHz/V, respectively.