X-ray rocking curve study of Si-implanted GaAs, Si, and Ge

• Published in: Applied physics letters Vol. 40; no. 7; pp. 604 - 606
• Main Authors: Speriosu, V. S., Paine, B. M., Nicolet, M-A., Glass, H. L.
• Format: Journal Article
• Language: English
• Published: 01-01-1982
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.93195

Crystalline properties of Si-implanted 〈100〉 GaAs, Si, and Ge have been studied by Bragg case double-crystal x-ray diffraction. Sharp qualitative and quantitative differences were found between the damage in GaAs on one hand and Si and Ge on the other. In Si and Ge the number of defects and the strain increase linearly with dose up to the amorphous threshold. In GaAs the increase in these quantities is neither linear nor monotonic with dose. At a moderate damage level the GaAs crystal undergoes a transition from elastic to plastic behavior. This transition is accompanied by the creation of extended defects, which are not detected in Si or Ge.