Growth of single-layer graphene on Ge (1 0 0) by chemical vapor deposition

• Published in: Applied surface science Vol. 447; pp. 816 - 821
• Main Authors: Mendoza, C.D., Caldas, P.G., Freire, F.L., Maia da Costa, M.E.H.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 31-07-2018
• Subjects: AFM; Germanium; Graphene; Raman spectroscopy; STM/STS; STM/STS; AFM; Germanium; Raman spectroscopy; Graphene
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2018.04.019

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•Synthesise graphene directly on p-type Ge (1 0 0) substrates by CVD.•The influence of the CH4:H2 flow ratio on the graphene growth.•The visualization of the carbon atoms of graphene on Ge by STM.•LDOS (Local Density of State) of graphene/Ge by STS.•Raman results suggest that the graphene is slightly strained.
The integration of graphene into nanoelectronic devices is dependent on the availability of direct deposition processes, which can provide uniform, large-area and high-quality graphene on semiconductor substrates such as Ge or Si. In this work, we synthesised graphene directly on p-type Ge (1 0 0) substrates by chemical vapour deposition. The influence of the CH4:H2 flow ratio on the graphene growth was investigated. Raman Spectroscopy, Raman mapping, Scanning Electron Microscopy, Atomic Force Microscopy and Scanning Tunnelling Microscopy/Scanning Tunnelling Spectroscopy results showed that good quality and homogeneous monolayer graphene over a large area can be achieved on Ge substrates directly with optimal growth conditions.