High-speed multibit operation of a dual vacancy-type oxide device with extended bi-polar resistive switching behaviors

• Published in: Applied physics. A, Materials science & processing Vol. 112; no. 4; pp. 807 - 815
• Main Authors: Choi, Sang-Jun, Kim, Ki-Hong, Yang, Woo-Young, Lee, Hyung-Ik, Heo, Sung, Park, Gyeong-Su, Shin, Hyun-Joon, Yu, Hyeongwoo, Kim, Minho, Cho, Soohaeng
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer Berlin Heidelberg 01-09-2013; Springer
• Subjects: Applied sciences; Characterization and Evaluation of Materials; Circuit properties; Compound structure devices; Condensed Matter Physics; Devices; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Exact sciences and technology; High speed; Machines; Manufacturing; Materials science; Nanotechnology; Optical and Electronic Materials; Oxides; Physics; Physics and Astronomy; Polarity; Processes; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Surfaces and Interfaces; Switching; Switching, multiplexing, switched capacity circuits; Thin Films; Voltage pulses; Schottky Barrier; Resistive Switching; Switching Behavior; Forward Bias; Bottom Electrode; Metal oxides; Vacancy; High speed; Electrical conductivity transitions; Selector switch; Copper oxide; Switching; MOM structure
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-013-7683-6

We investigated the resistive switching behaviors of the metal–copper oxide–metal devices with the enhanced capability in terms of high speed and multi-bit operation. From the analysis of the normal and extended resistive switching behaviors, the voltage-induced resistive changes were modeled and the resistive switching polarity was explained. Also, we proposed and fabricated a dual vacancy-type device structure with an extended resistive switching behavior and demonstrated a high-speed implemental 2-bit multi-bit operation by controlling specifically switch-on voltage pulses.