100+ GHz static divide-by-2 circuit in InP-DHBT technology

• Published in: IEEE journal of solid-state circuits Vol. 38; no. 9; pp. 1540 - 1544
• Main Authors: Mokhtari, M., Fields, C., Rajavel, R.D., Sokolich, M., Jensen, J.F., Stanchina, W.E.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-09-2003; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Bipolar transistors; Circuits; Current density; DH-HEMTs; Direct current; Dividers; Flip-flops; Frequency measurement; Heterojunction bipolar transistors; Indium phosphide; Time measurement; Voltage
• ISSN: 0018-9200; 1558-173X
• DOI: 10.1109/JSSC.2003.815921

Static dividers in 135-GHz InP-DHBT technology have been designed, fabricated, and measured. Circuits are operational from dc to 100 GHz. Due to limitations in available measurement equipment, adequate investigation of the circuit operation beyond 100 GHz is not possible at this time, however, to the authors' knowledge, this is already the highest toggling frequency reported in any static circuit in any technology. The circuit has a total area of 675/spl times/900 /spl mu/m/sup 2/, with the core of the flip-flop occupying about 240/spl times/170 /spl mu/m/sup 2/.