A Generalized SiGe HBT Single-Event Effects Model for On-Orbit Event Rate Calculations

• Published in: IEEE transactions on nuclear science Vol. 54; no. 6; pp. 2322 - 2329
• Main Authors: Pellish, J.A., Reed, R.A., Sutton, A.K., Weller, R.A., Carts, M.A., Marshall, P.W., Marshall, C.J., Krithivasan, R., Cressler, J.D., Mendenhall, M.H., Schrimpf, R.D., Warren, K.M., Sierawski, B.D., Niu, G.F.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-12-2007; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: BiCMOS integrated circuits; Calibration; Circuit simulation; Computer simulation; Deep trench isolation; Geant4; geosynchronous orbit; Geosynchronous orbits; Germanium silicon alloys; Heterojunction bipolar transistors; High speed; High speed integrated circuits; Integrated circuit modeling; Logic circuits; low-earth orbit; Mathematical models; Protons; rate prediction; Silicon germanides; Silicon germanium; silicon-germanium HBT; Single event upset; Space environment; Spacecraft
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2007.909987

This work draws on experimental and simulation results to derive a generalized SEU response model for bulk SiGe HBTs. The model was validated using published heavy ion and new proton data gathered from high-speed HBT digital logic integrated circuits fabricated in the IBM 5AM SiGe BiCMOS process. Calibrating to heavy ion data was sufficient to reproduce the proton data without further adjustment. The validated model is used to calculate upset event rates for low-earth and geosynchronous orbits under typical conditions.