A 40-gb/s InGaAlAs-InAlAs MQW n-i-n Mach-Zehnder Modulator with a drive Voltage of 2.3 V

• Published in: IEEE photonics technology letters Vol. 17; no. 1; pp. 46 - 48
• Main Authors: Tsuzuki, Ken, Ishibashi, Tadao, Ito, Tsuyoshi, Oku, Satoshi, Shibata, Yasuo, Ito, Toshio, Iga, Ryuzo, Kondo, Yasuhiro, Tohmori, Yuichi
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-01-2005; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Chirp modulation; Devices; Electric potential; Electrodes; Electrooptic effect; electrorefractive effect; Heterostructures; Indium phosphides; Indium tin oxide; InP; isotype heterostructure; Mach-Zehnder; Modulators; Optical interferometry; Optical losses; Optical modulation; optical modulator; Optical waveguides; Photonics; PIN photodiodes; Quantum well devices; semiconductor devices; Voltage
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/LPT.2004.836900

We have developed a traveling-wave Mach-Zehnder modulator using an n-i-n heterostructure fabricated on an InP substrate. We obtained an extremely small /spl pi/ voltage (V/spl pi/) of 2.2 V, even for a short signal-electrode length of 3 mm. We confirmed that the device has an impedance-matched electrode and operates at 40 Gb/s with a single-ended drive voltage of 2.3 V.