Characterization of thin copper films grown via chemical vapor deposition using liquid coinjection of trimethylvinylsilane and (hexafluoroacetylacetonate) Cu (trimethylvinylsilane)

We have developed a technique recently for copper chemical vapor deposition utilizing direct liquid coinjection of trimethylvinylsilane (TMVS) and the copper (I) precursor (hexafluoroacetylacetonate) Cu (TMVS). We present here an investigation of the properties of copper films deposited using this t...

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Bibliographic Details
Published in:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Vol. 13; no. 1; pp. 130 - 136
Main Authors:	Parmeter, J. E., Petersen, G. A., Smith, P. M., Apblett, C. A., Reid, J. S., Norman, J. A. T., Hochberg, A. K., Roberts, D. A., Omstead, Thomas R.
Format:	Journal Article
Language:	English
Published:	United States 01-01-1995
Subjects:	ANNEALING CHEMICAL COATING CHEMICAL VAPOR DEPOSITION COPPER DENSITY DEPOSITION DIMENSIONS ELECTRIC CONDUCTIVITY ELECTRICAL PROPERTIES ELEMENTS GRAIN SIZE HEAT TREATMENTS IMPURITIES MATERIALS SCIENCE METALS MICROSTRUCTURE ORGANIC COMPOUNDS ORGANIC SILICON COMPOUNDS ORGANOMETALLIC COMPOUNDS PHYSICAL PROPERTIES SIZE SURFACE COATING TEMPERATURE RANGE TEMPERATURE RANGE 0400-1000 K THICKNESS THIN FILMS TRANSITION ELEMENTS 360102 > Metals & Alloys > Structure & Phase Studies CHEMICAL VAPOR DEPOSITION ORGANOMETALLIC COMPOUNDS ORGANIC SILICON COMPOUNDS THIN FILMS ANNEALING GRAIN SIZE COPPER IMPURITIES DENSITY Cu ELECTRIC CONDUCTIVITY THICKNESS TEMPERATURE RANGE 0400−1000 K
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