Direct optical probing of negative carriers from an operating [6,6]-phenyl C61 butyric acid methyl ester diode

• Published in: Applied physics letters Vol. 97; no. 3; pp. 033307 - 033307-3
• Main Authors: Kanemoto, Katsuichi, Ogata, Akihiko, Inoue, Nobuyuki, Kusumoto, Toshiyuki, Hashimoto, Hideki, Akai, Ichiro, Karasawa, Tsutomu
• Format: Journal Article
• Language: English
• Published: American Institute of Physics 19-07-2010
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.3467007

We have performed spectroscopic measurements combining with the diode operation of [6,6]-phenyl C61 butyric acid methyl ester (PCBM) for directly characterizing the nature of its
n
-carriers. The measurements in the visible region reveal that electrons for the
n
-carrier generation are primarily accommodated into the
t
1
g
and
t
1
u
levels. The measurements in the near-infrared region indicate that the
n
-carriers of the PCBM diode are delocalized compared to the PCBM anions in solution. We also show that the frequency-dependence of the spectroscopic signals can estimate the lifetime of the
n
-carriers in the PCBM diode
(
23

μ
s
)
.