Characterization of graphene synthesized by low-pressure chemical vapor deposition using N-Octane as precursor

• Published in: Materials chemistry and physics Vol. 219; pp. 189 - 195
• Main Authors: Barbosa, André do Nascimento, Figueroa, N.J.S., Mendoza, C.D., Pinto, A.L., Freire, F.L.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01-11-2018; Elsevier BV
• Subjects: Atomic force microscopy; Bilayers; Carbon content; Chemical synthesis; Chemical vapor deposition; CVD; Ethanol; Graphene; Hydrocarbons; Mapping; Molecular structure; Monolayers; N-Octane; Organic chemistry; Precursors; Raman spectra; Raman spectroscopy; Scanning tunneling spectroscopy; Substrates; Synthesis temperature; CVD; Synthesis temperature; N-Octane; Scanning tunneling spectroscopy; Raman spectroscopy; Graphene
• ISSN: 0254-0584; 1879-3312
• DOI: 10.1016/j.matchemphys.2018.08.031

We report single-layer graphene synthesis using high-carbon content N-Octane as precursor. Unlike methanol, ethanol and other liquid carbon precursors, N-Octane is oxygen free and its molecular structure is simply a common hydrocarbon. Optimal precursor pressure for synthesis was found to be at 5–20 mTorr range, as at higher partial pressures we have achieved bilayer and few-layer coverage of the copper substrates with {111} plane parallel to the surface, as revealed by Raman spectroscopy. We could lower the synthesis temperature down to 850 °C and still obtained graphene layers with low concentration of defects. For the complete coverage of the substrates, we report shorter than usual synthesis time, of no more than 5 min. Characterization of graphene layers were performed using Raman scattering spectroscopy and mapping, UV–vis transmittance as well as atomic force microscopy, scanning tunneling microscopy and scanning tunneling spectroscopy.
•New precursor for CVD-Grown graphene.•Copper surface orientation treatment for higher single-layer graphene yield.•Raman, AFM and STM characterization of graphene samples.•Fast, homogeneous single-layer graphene growth.