The influence of the conditions of synthesis on the composition and mechanical properties of silicon oxycarbonitride nanocomposite films

Dielectric films of hydrogenated silicon oxycarbonitride SiC x N y O z :H were prepared by plasmaenhanced chemical vapor deposition using gas mixtures of 1,1,1,3,3,3-hexamethyldisilazane (HMDS) or 1,1,3,3-tetramethyldisilazane (TMDS) with oxygen and nitrogen in the temperature range of 373–973 K. Th...

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Published in:Protection of metals and physical chemistry of surfaces Vol. 53; no. 2; pp. 253 - 260
Main Authors: Fainer, N. I., Plekhanov, A. G., Khomyakov, M. N., Maksimovskiy, E. A., Rumyantsev, Yu. M.
Format: Journal Article
Language:English
Published: Moscow Pleiades Publishing 01-03-2017
Springer Nature B.V
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Summary:Dielectric films of hydrogenated silicon oxycarbonitride SiC x N y O z :H were prepared by plasmaenhanced chemical vapor deposition using gas mixtures of 1,1,1,3,3,3-hexamethyldisilazane (HMDS) or 1,1,3,3-tetramethyldisilazane (TMDS) with oxygen and nitrogen in the temperature range of 373–973 K. The effect of the conditions of synthesis on the chemical and phase composition of the films was studied, in the amorphous part of which nanocrystals belonging to the phases of the Si–C–N system α-Si 3 N 4 , α-Si 3– x C x N 4 , and graphite were distributed. To measure the hardness and Young’s modulus, the nanoindentation method was used. The influence that the synthesis temperature and nitrogen-to-oxygen ratio in the initial gas mixtures HMDS + O 2 + x N 2 and TMDS + O 2 + x N 2 have on the hardness and Young’s modulus of the resulting SiC x N y O z :H films was investigated. The maximum obtained values of these parameters were 20.4 and 201.5 GPa, respectively.
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ISSN:2070-2051
2070-206X
DOI:10.1134/S2070205117020095