Visible-blind ultraviolet photodetectors on porous silicon carbide substrates

• Published in: Materials research bulletin Vol. 48; no. 6; pp. 2406 - 2408
• Main Authors: Naderi, N., Hashim, M.R.
• Format: Journal Article
• Language: English
• Published: United States Elsevier Ltd 01-06-2013
• Subjects: A. Optical materials; A. Semiconductors; ABSORPTION; B. Chemical synthesis; Carbides; CONTROL; CURRENT DENSITY; D. Electrical properties; D. Luminescence; ELECTRICAL PROPERTIES; Etching; Gain; LUMINESCENCE; MATERIALS SCIENCE; OPTICAL PROPERTIES; PHOTODETECTORS; Porous silicon; SENSITIVITY; Silicon carbide; SILICON CARBIDES; Silicon substrates; SUBSTRATES; SYNTHESIS; B. Chemical synthesis; A. Optical materials; D. Luminescence; A. Semiconductors; D. Electrical properties
• ISSN: 0025-5408; 1873-4227
• DOI: 10.1016/j.materresbull.2013.02.078

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•Highly reliable UV detectors are fabricated on porous silicon carbide substrates.•The optical properties of samples are enhanced by increasing the current density.•The optimized sample exhibits enhanced sensitivity to the incident UV radiation.
Highly reliable visible-blind ultraviolet (UV) photodetectors were successfully fabricated on porous silicon carbide (PSC) substrates. High responsivity and high photoconductive gain were observed in a metal–semiconductor–metal ultraviolet photodetector that was fabricated on an optimized PSC substrate. The PSC samples were prepared via the UV-assisted photo-electrochemical etching of an n-type hexagonal silicon carbide (6H-SiC) substrate using different etching current densities. The optical results showed that the current density is an outstanding etching parameter that controls the porosity and uniformity of PSC substrates. A highly porous substrate was synthesized using a suitable etching current density to enhance its light absorption, thereby improving the sensitivity of UV detector with this substrate. The electrical characteristics of fabricated devices on optimized PSC substrates exhibited enhanced sensitivity and responsivity to the incident radiation.