Ultralong minority-carrier lifetime epitaxial GaAs by photon recycling

• Published in: Applied physics letters Vol. 55; no. 11; pp. 1088 - 1090
• Main Authors: AHRENKIEL, R. K, DUNLAVY, D. J, KEYES, B, VERNON, S. M, DIXON, T. M, TOBIN, S. P, MILLER, K. L, HAYES, R. E
• Format: Journal Article
• Language: English
• Published: Melville, NY American Institute of Physics 11-09-1989
• Subjects: ARSENIC COMPOUNDS; ARSENIDES; CARRIER LIFETIME; CHARGE CARRIERS; Charge carriers: generation, recombination, lifetime, and trapping; CHEMICAL COATING; CHEMICAL VAPOR DEPOSITION; COATINGS; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity phenomena in semiconductors and insulators; DEPOSITION; DIMENSIONS; Electronic transport in condensed matter; EPITAXY; Exact sciences and technology; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; LIFETIME; LUMINESCENCE; MATERIALS SCIENCE; ORGANIC COMPOUNDS; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; Physics; PNICTIDES; SURFACE COATING 360603 > Materials > Properties; THICKNESS; THIN FILMS; VAPOR DEPOSITED COATINGS; Thickness; Gallium Arsenides; Time resolution; Lifetime; Minority carrier; Semiconductor materials; Thick film; Charge carrier; Photoluminescence; Epitaxial film; Experimental study; Inorganic compound
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.101713

The minority-carrier lifetime has been measured by time-resolved photoluminescence in epitaxial films of GaAs grown by metalorganic chemical vapor deposition. The measured lifetimes in thicker devices are 4 to 6 times the theoretical or radiative lifetime. These long lifetimes are the result of photon recycling or self-generation of the self-absorbed radiation.