Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique
High-quality undoped and Ga2O3-doped ZnO thin films have been co-evaporated by reactive electron beam evaporation in an oxygen environment. The effect of the dopant on the structural, optical and electrical properties has been investigated. X-ray diffraction measurements have shown that the Ga2O3-do...
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| Published in: | Journal of crystal growth Vol. 275; no. 3-4; pp. 512 - 520 |
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| Main Authors: | , , , , , , |
| Format: | Journal Article |
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Elsevier
01-03-2005
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| Abstract | High-quality undoped and Ga2O3-doped ZnO thin films have been co-evaporated by reactive electron beam evaporation in an oxygen environment. The effect of the dopant on the structural, optical and electrical properties has been investigated. X-ray diffraction measurements have shown that the Ga2O3-doped ZnO films are c-axis-oriented and that the linewidth of the (002) peak is sensitive to the variation of the dopant concentration. The 28% Ga2O3-doped ZnO films showed the best crystallinity. The AFM images have shown that the surfaces of the Ga2O3-doped ZnO became smoother by raising the concentration of Ga2O3 in the fabricated films. Photoluminescence on 28% Ga2O3-doped ZnO reveals an enhancement of the near band edge ultraviolet emission at 380nm while the intensity of the deep level emissions weakens. A reduction of the oxygen vacancies as well as the reduction of the zinc interstitials with gallium may explain this effect. Thus the possibility of transitions of electron in the conduction band to a deep acceptor level due to zinc interstitials may decrease. The optical band-gap energy increased with the rise of the dopant concentration. The electrical resistivity increased with the rising of the Ga2O3 concentration while the carrier concentration decreased which is due to chemisorptions of oxygen into the ZnO thin films. |
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| AbstractList | High-quality undoped and Ga2O3-doped ZnO thin films have been co-evaporated by reactive electron beam evaporation in an oxygen environment. The effect of the dopant on the structural, optical and electrical properties has been investigated. X-ray diffraction measurements have shown that the Ga2O3-doped ZnO films are c-axis-oriented and that the linewidth of the (0 0 2) peak is sensitive to the variation of the dopant concentration. The 28% Ga2O3-doped ZnO films showed the best crystallinity. The AFM images have shown that the surfaces of the Ga2O3-doped ZnO became smoother by raising the concentration of Ga2O3 in the fabricated films. Photoluminescence on 28% Ga2O3-doped ZnO reveals an enhancement of the near band edge ultraviolet emission at 380 nm while the intensity of the deep level emissions weakens. A reduction of the oxygen vacancies as well as the reduction of the zinc interstitials with gallium may explain this effect. Thus the possibility of transitions of electron in the conduction band to a deep acceptor level due to zinc interstitials may decrease. The optical band-gap energy increased with the rise of the dopant concentration. The electrical resistivity increased with the rising of the Ga2O3 concentration while the carrier concentration decreased which is due to chemisorptions of oxygen into the ZnO thin films. (c) 2004 Elsevier B.V. All rights reserved. High-quality undoped and Ga2O3-doped ZnO thin films have been co-evaporated by reactive electron beam evaporation in an oxygen environment. The effect of the dopant on the structural, optical and electrical properties has been investigated. X-ray diffraction measurements have shown that the Ga2O3-doped ZnO films are c-axis-oriented and that the linewidth of the (002) peak is sensitive to the variation of the dopant concentration. The 28% Ga2O3-doped ZnO films showed the best crystallinity. The AFM images have shown that the surfaces of the Ga2O3-doped ZnO became smoother by raising the concentration of Ga2O3 in the fabricated films. Photoluminescence on 28% Ga2O3-doped ZnO reveals an enhancement of the near band edge ultraviolet emission at 380nm while the intensity of the deep level emissions weakens. A reduction of the oxygen vacancies as well as the reduction of the zinc interstitials with gallium may explain this effect. Thus the possibility of transitions of electron in the conduction band to a deep acceptor level due to zinc interstitials may decrease. The optical band-gap energy increased with the rise of the dopant concentration. The electrical resistivity increased with the rising of the Ga2O3 concentration while the carrier concentration decreased which is due to chemisorptions of oxygen into the ZnO thin films. |
| Author | GIANI, A KHOURY, A COMBETTE, P JUILLAGUET, S AL ASMAR, R RAMONDA, M FOUCARAN, A |
| Author_xml | – sequence: 1 givenname: R surname: AL ASMAR fullname: AL ASMAR, R organization: Universite Montpellier II (CEM2) UMR CNRS 5507, Université Montpellier II, Place E. Bataillon, 34095 Montpellier, France – sequence: 2 givenname: S surname: JUILLAGUET fullname: JUILLAGUET, S organization: Université Montpellier II (CES) UMR CNRS 5650, Université Montpellier II, Place E. Bataillon, 34095 Montpellier, France – sequence: 3 givenname: M surname: RAMONDA fullname: RAMONDA, M organization: Laboratoire de Microscopie en Champ Proche (LMCP), Université Montpellier II, Place E. Bataillon, 34095 Montpellier, France – sequence: 4 givenname: A surname: GIANI fullname: GIANI, A organization: Universite Montpellier II (CEM2) UMR CNRS 5507, Université Montpellier II, Place E. Bataillon, 34095 Montpellier, France – sequence: 5 givenname: P surname: COMBETTE fullname: COMBETTE, P organization: Universite Montpellier II (CEM2) UMR CNRS 5507, Université Montpellier II, Place E. Bataillon, 34095 Montpellier, France – sequence: 6 givenname: A surname: KHOURY fullname: KHOURY, A organization: Laboratoire de Physique des Semi-conducteurs et Energétiques (LPSE), Département de Physique, Université Libanaise, Faculté des Sciences II, 90656 Jdeidet, Lebanon – sequence: 7 givenname: A surname: FOUCARAN fullname: FOUCARAN, A organization: Universite Montpellier II (CEM2) UMR CNRS 5507, Université Montpellier II, Place E. Bataillon, 34095 Montpellier, France |
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| Issue | 3-4 |
| Keywords | Chemisorption Atomic force microscopy Al. Atomic force microscopy Inorganic compounds Vacancies Transition element compounds Doping Interstitials Photoluminescence Binary compounds Crystal growth from vapors XRD Experimental study Al. Hall measurements Al. Photoluminescence measurements B1. Ga2O3-doped ZnO Thin films Zinc oxides Quantity ratio II-VI semiconductors A3. E-beam co-evaporation Carrier density Electron beam evaporation Deep level ROOM-TEMPERATURE E-beam co-evaporation DEPOSITION OPTICAL-PROPERTIES Ga2O3-doped ZnO photoluminescence measurements atomic force microscopy hall measurements EVAPORATION EPITAXY PHOTOLUMINESCENCE PROPERTIES LUMINESCENCE GROWTH ZINC-OXIDE FILMS LAYER |
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| SubjectTerms | Condensed Matter Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science; rheology Electronics Engineering Sciences Exact sciences and technology Ii-vi semiconductors Materials Science Methods of deposition of films and coatings; film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics Vapor phase epitaxy; growth from vapor phase |
| Title | Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique |
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