Tuning emission in violet, blue, green and red in cubic GaN/InGaN/GaN quantum wells

• Published in: Journal of crystal growth Vol. 435; pp. 110 - 113
• Main Authors: Orozco Hinostroza, I.E., Avalos-Borja, M., Compeán García, V.D., Zamora, C. Cuellar, Rodríguez, A.G., López Luna, E., Vidal, M.A.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-02-2016
• Subjects: A3. Molecular beam epitaxy; A3. Quantum wells; B2. Semiconducting III–V materials; B3. Heterojunction semiconductor devices; Crystal growth; Emission; Gallium nitrides; Heterostructures; Indium gallium nitrides; Magnesium oxide; Quantum wells; Tuning; B3. Heterojunction semiconductor devices; A3. Quantum wells; A3. Molecular beam epitaxy; B2. Semiconducting III–V materials
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2015.11.022

Light emission in the three primary colors was achieved in cubic GaN/InGaN/GaN heterostructures grown by molecular beam epitaxy on MgO substrates in a single growth process. A heterostructure with four quantum wells with a width of 10nm was grown; this quantum wells width decrease the segregation effect of In. Photoluminescence emission produced four different emission signals: violet, blue, green-yellow and red. Thus, we were able to tune energy transitions in the visible spectrum modifying the In concentration in cubic InxGa1−xN ternary alloy.
•Cubic InGaN Single Quantum Wells were grown on MgO by PAMBE.•Transition emissions were studied by means of photoluminescence.•A heterostructure with several QWs was synthesized.•Emissions from violet to red were achieved.•Using Vegard’s law the In compositions was calculated with RHEED pattern results.