Microstructure of Si Crystals Subjected to Irradiation with High-Energy H+ Ions and Heat Treatment by High-Resolution Three-Crystal X-Ray Diffraction and Transmission Electron Microscopy

• Published in: Physics of the solid state Vol. 61; no. 10; pp. 1707 - 1715
• Main Authors: Asadchikov, V. E., D’yachkova, I. G., Zolotov, D. A., Chukhovskii, F. N., Sorokin, L. M.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-10-2019; Springer Nature B.V
• Subjects: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Crystal defects; Crystal structure; CRYSTALS; DEFECTS; DOSES; Heat treating; Heat treatment; High resolution; HYDROGEN IONS 1 PLUS; KEV RANGE; MICROSTRUCTURE; Physics; Physics and Astronomy; PROTONS; Radiation damage; RADIATION EFFECTS; Semiconductors; SILICON; Solid State Physics; TEMPERATURE RANGE 0400-1000 K; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; three-crystal X-ray diffractometry; silicon; transmission electron microscopy; hydrogen ions; and radiation defects; post-implantation annealing
• ISSN: 1063-7834; 1090-6460
• DOI: 10.1134/S1063783419100068

The structural features of the formation of radiation defects in proton-implanted layers of silicon plates during their heat treatment have been studied. New data on the nature, the characteristics, and the microdefect concentration in Si crystals irradiated with protons with energies 100 + 200 + 300 keV with the total dose 2 × 10
16
cm
–2
and the evolution of the defect structure during heat treatment have been obtained by high-resolution three-crystal X-ray diffraction and transmission electron microscopy over wide temperature range from 200 to 1100°C.