Reliability of in-situ rapid thermal gate dielectrics in deep submicrometer MOSFET's

Reliability of in-situ rapid thermal gate dielectrics in deep submicrometer MOSFET's

Several in-situ, rapid thermal gate dielectrics, 6.5-nm thick, including RTO, RTCVD, and RPECVD were used to fabricate fully implanted 0.25-/spl mu/m NMOSFET's along with Furnace gate oxides. The device reliability was studied by both channel hot-carrier stress and Fowler-Nordheim electron inje...

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Bibliographic Details
Published in:IEEE transactions on electron devices Vol. 42; no. 12; pp. 2181 - 2188
Main Authors: Zhang, K.X., Osburn, C.M.
Format: Journal Article
Language:English
Published: IEEE 01-12-1995
Subjects:
Chemical vapor deposition
Dielectric substrates
Etching
Furnaces
Hot carriers
MOSFET circuits
Oxidation
Rapid thermal processing
Reliability engineering
Thermal engineering
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Summary:Several in-situ, rapid thermal gate dielectrics, 6.5-nm thick, including RTO, RTCVD, and RPECVD were used to fabricate fully implanted 0.25-/spl mu/m NMOSFET's along with Furnace gate oxides. The device reliability was studied by both channel hot-carrier stress and Fowler-Nordheim electron injection. It was found that devices having RTO or RTCVD oxides have about the same hot-carrier resistance as Furnace ones, while RPECVD oxides, deposited directly on Si without a grown oxide interface, were more susceptible to shifts. Both RTCVD and RPECVD oxides have a lower Si-SiO/sub 2/ barrier height (2.7 eV); nevertheless, RTCVD oxides show enhanced resistance against interface-state generation, threshold voltage shifts, and charging during Fowler-Nordheim stressing.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.477777