Highly reliable polysilicon oxide grown by electron cyclotron resonance nitrous oxide plasma

Highly reliable polysilicon oxide grown by electron cyclotron resonance nitrous oxide plasma

Highly reliable inter-polysilicon oxide (polyoxide) for nonvolatile memory applications has been achieved using electron cyclotron resonance (ECR) N/sub 2/O-plasma. It is demonstrated that the N/sub 2/O-plasma polyoxide grown on doped poly-Si has a low leakage current and high breakdown field due to...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters Vol. 18; no. 10; pp. 486 - 488
Main Authors: Lee, Nae-In, Lee, Jin-Woo, Hur, Sung-Hoi, Kim, Hyoung-Sub, Han, Chul-Hi
Format: Journal Article
Language:English
Published: IEEE 01-10-1997
Subjects:
Cyclotrons
Electric breakdown
Electrodes
Electrons
Leakage current
Nonvolatile memory
Oxidation
Plasmas
Resonance
Silicon
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Highly reliable inter-polysilicon oxide (polyoxide) for nonvolatile memory applications has been achieved using electron cyclotron resonance (ECR) N/sub 2/O-plasma. It is demonstrated that the N/sub 2/O-plasma polyoxide grown on doped poly-Si has a low leakage current and high breakdown field due to a smooth polyoxide/poly-Si interface and nitrogen incorporation during oxidation. Moreover, the polyoxide has much less electron trapping and over one order larger charge-to-breakdown (Q/sub bd/) up to 10 C/cm/sup 2/ than thermal polyoxide. The N/sub 2/O-plasma polyoxide can be a good choice for the interpoly dielectric of nonvolatile memories.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/55.624924