Optical study of single InAs on In0.12Ga0.88As self-assembled quantum dots: biexciton binding energy dependence on the dots size

• Published in: Applied physics. B, Lasers and optics Vol. 84; no. 1-2; pp. 317 - 322
• Main Authors: Dal Savio, C., Pierz, K., Ade, G., Danzebrink, H.-U., Göbel, E.O., Hangleiter, A.
• Format: Journal Article
• Language: English
• Published: 01-07-2006
• Subjects: Binding energy; Confinement; Emission; Excitation; Indium arsenides; Infrared; Lasers; Quantum dots
• ISSN: 0946-2171; 1432-0649
• DOI: 10.1007/s00340-006-2327-6

Single self-assembled InAs quantum dots embedded in a In0.12Ga0.88As quantum well and emitting in the near infrared have been optically investigated. The dependence on the excitation power of the single quantum dot photoluminescence has been used to identify the emission of the biexciton complex. The biexciton binding energy, which has been measured for a dozen dots, increases with increasing exciton transition energy for the dot sizes investigated in the present work, as a consequence of stronger confinement in a smaller quantum dot. The obtained data is compared with experimental results available in the literature for InAs quantum dots.