Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods

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Bibliographic Details
Published in:	The Journal of physics and chemistry of solids Vol. 66; no. 11; pp. 1868 - 1871
Main Authors:	CHICHIBU, Shigefusa F, OHMORI, Takuya, SHIBATA, Naoyuki, KOYAMA, Takahiro, ONUMA, Takeyoshi
Format:	Conference Proceeding Journal Article
Language:	English
Published:	Oxford Elsevier 01-11-2005
Subjects:	Applied sciences Electronics Exact sciences and technology Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices B. Chalcopyrites compounds Semiconductor materials Electron injection Photoluminescence Electroluminescence Epitaxial film Gallium sulfide Preferred orientation Light emitting diode A. Semiconductors Chalcopyrite MOVPE method A. Metalorganic vapor phase epitaxy (MOVPE) Copper sulfide Zinc oxide B. Light- emitting diodes Sputter deposition B. Semiconducting ternary compounds Heterostructures
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ISSN:	0022-3697 1879-2553
DOI:	10.1016/j.jpcs.2005.09.007