Failure predictive model of capacitive RF-MEMS

• Published in: Microelectronics and reliability Vol. 45; no. 9; pp. 1770 - 1775
• Main Authors: Mellé, S., De Conto, D., Mazenq, L., Dubuc, D., Poussard, B., Bordas, C., Grenier, K., Bary, L., Vendier, O., Muraro, J.L., Cazaux, J.L., Plana, R.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Oxford Elsevier Ltd 01-09-2005; Elsevier
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Micro- and nanoelectromechanical devices (mems/nems); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Electric stress; Durability; Leakage current; Reliability; Failures; Microelectromechanical device; Figure of merit; Optimization; Electrical characteristic
• ISSN: 0026-2714; 1872-941X
• DOI: 10.1016/j.microrel.2005.07.092

This paper reports on the investigation of the failure mechanism in capacitive RF-MEMS through an efficient analysis methodology. We demonstrate that the physical origin of the dielectric charging is the leakage current through the RF-MEMS dielectric. To monitor the kinetic of this failure phenomenon, we introduce a useful parameter, which corresponds to the shift rate of the actuation voltages (SRAV) and an appropriate reliability-driven electrical stress parameter, which takes the contact quality between the bridge and the dielectric into account. We finally propose a figure of merit, derived from a predictive model, which quantifies the capacitive RF MEMS reliability and open the door to the prediction of lifetime as well as its optimization and/or acceleration for testing.