Effect of oxygen-to-metal flux ratio on incorporation of metal species into quaternary BeMgZnO grown by plasma-assisted molecular beam epitaxy
•VI/II ratio 1.0–0.6 is varied during the MBE growth of BeMgZnO epitaxial films.•Bandgap modulated from 4.0eV to 4.5eV.•The c lattice parameter changed from 5.08Å to 5.02Å.•The composition changed from Be0.07Mg0.21Zn0.72O to Be0.10Mg0.3 4Zn0.56O.•Zn incorporation coefficient reduced from 0.23 to 0.1...
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Published in: | Journal of crystal growth Vol. 467; pp. 145 - 149 |
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Abstract | •VI/II ratio 1.0–0.6 is varied during the MBE growth of BeMgZnO epitaxial films.•Bandgap modulated from 4.0eV to 4.5eV.•The c lattice parameter changed from 5.08Å to 5.02Å.•The composition changed from Be0.07Mg0.21Zn0.72O to Be0.10Mg0.3 4Zn0.56O.•Zn incorporation coefficient reduced from 0.23 to 0.12, Be and Mg remained at ∼1.
Owing to its large bandgap covering the UV region of the optical spectrum, the quaternary BeMgZnO is of interest, particularly the collective effect Be and Mg fluxes on the solid composition. Incorporation of Be, Mg, and Zn in the wurtzite BeMgZnO quaternary alloy was found to depend strongly on the reactive-oxygen to metal flux ratio during growth by plasma-assisted molecular beam epitaxy under metal-rich conditions. For a given set of metal fluxes, reducing the VI/II (oxygen to metal flux) ratio from 1.0 to 0.6 increased the bandgap from 4.0eV to 4.5eV and decreased the c lattice parameter from 5.08Å to 5.02Å. The corresponding change in composition from Be0.07Mg0.21Zn0.72O to Be0.10Mg0.34Zn0.56O was consistent with a systematic reduction in the Zn incorporation coefficient from 0.23 to 0.12, while those of Be and Mg remained at ∼1. This behavior was explained by the substantially lower formation enthalpies of wurtzite BeO and MgO, −5.98eV and −5.64eV, respectively, compared to that of ZnO, −3.26eV, determined using first principles calculations, as well as the high equilibrium vapor pressure of Zn, which results in re-evaporation of excessive Zn from the growing surface, details of which are the topic of this manuscript. |
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AbstractList | Owing to its large bandgap covering the UV region of the optical spectrum, the quaternary BeMgZnO is of interest, particularly the collective effect Be and Mg fluxes on the solid composition. Incorporation of Be, Mg, and Zn in the wurtzite BeMgZnO quaternary alloy was found to depend strongly on the reactive-oxygen to metal flux ratio during growth by plasma-assisted molecular beam epitaxy under metal-rich conditions. For a given set of metal fluxes, reducing the VI/II (oxygen to metal flux) ratio from 1.0 to 0.6 increased the bandgap from 4.0 eV to 4.5 eV and decreased the c lattice parameter from 5.08 Å to 5.02 Å. The corresponding change in composition from Be0.07Mg0.21Zn0.72O to Be0.10Mg0.34Zn0.56O was consistent with a systematic reduction in the Zn incorporation coefficient from 0.23 to 0.12, while those of Be and Mg remained at ~1. This behavior was explained by the substantially lower formation enthalpies of wurtzite BeO and MgO, -5.98 eV and -5.64 eV, respectively, compared to that of ZnO, -3.26 eV, determined using first principles calculations, as well as the high equilibrium vapor pressure of Zn, which results in re-evaporation of excessive Zn from the growing surface, details of which are the topic of this manuscript. •VI/II ratio 1.0–0.6 is varied during the MBE growth of BeMgZnO epitaxial films.•Bandgap modulated from 4.0eV to 4.5eV.•The c lattice parameter changed from 5.08Å to 5.02Å.•The composition changed from Be0.07Mg0.21Zn0.72O to Be0.10Mg0.3 4Zn0.56O.•Zn incorporation coefficient reduced from 0.23 to 0.12, Be and Mg remained at ∼1. Owing to its large bandgap covering the UV region of the optical spectrum, the quaternary BeMgZnO is of interest, particularly the collective effect Be and Mg fluxes on the solid composition. Incorporation of Be, Mg, and Zn in the wurtzite BeMgZnO quaternary alloy was found to depend strongly on the reactive-oxygen to metal flux ratio during growth by plasma-assisted molecular beam epitaxy under metal-rich conditions. For a given set of metal fluxes, reducing the VI/II (oxygen to metal flux) ratio from 1.0 to 0.6 increased the bandgap from 4.0eV to 4.5eV and decreased the c lattice parameter from 5.08Å to 5.02Å. The corresponding change in composition from Be0.07Mg0.21Zn0.72O to Be0.10Mg0.34Zn0.56O was consistent with a systematic reduction in the Zn incorporation coefficient from 0.23 to 0.12, while those of Be and Mg remained at ∼1. This behavior was explained by the substantially lower formation enthalpies of wurtzite BeO and MgO, −5.98eV and −5.64eV, respectively, compared to that of ZnO, −3.26eV, determined using first principles calculations, as well as the high equilibrium vapor pressure of Zn, which results in re-evaporation of excessive Zn from the growing surface, details of which are the topic of this manuscript. |
Author | Toporkov, M. Özgür, Ü. Ullah, M.B. Demchenko, D.O. Morkoç, H. Avrutin, V. |
Author_xml | – sequence: 1 givenname: M. surname: Toporkov fullname: Toporkov, M. email: toporkovm@vcu.edu organization: Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA, United States – sequence: 2 givenname: M.B. surname: Ullah fullname: Ullah, M.B. organization: Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA, United States – sequence: 3 givenname: D.O. surname: Demchenko fullname: Demchenko, D.O. organization: Department of Physics, Virginia Commonwealth University, Richmond, VA, United States – sequence: 4 givenname: V. surname: Avrutin fullname: Avrutin, V. organization: Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA, United States – sequence: 5 givenname: H. surname: Morkoç fullname: Morkoç, H. organization: Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA, United States – sequence: 6 givenname: Ü. surname: Özgür fullname: Özgür, Ü. organization: Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA, United States |
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Cites_doi | 10.1016/j.jcrysgro.2014.04.028 10.1063/1.1992666 10.1039/b801115j 10.1088/0022-3727/47/17/175102 10.1063/1.2926673 10.1002/pssr.200903410 10.1021/am503427u 10.1038/nmat2874 10.1002/adma.200901108 10.1103/PhysRevB.84.075201 10.1016/j.jcrysgro.2011.04.036 10.1016/j.jallcom.2013.04.174 10.1016/j.apsusc.2014.11.067 10.1063/1.2382669 10.1063/1.4942835 10.1016/j.jcrysgro.2004.11.377 10.1016/j.spmi.2005.08.025 10.1063/1.4853535 10.1063/1.4907907 10.1063/1.121384 10.1016/j.jallcom.2014.04.122 10.1063/1.125340 10.1063/1.4807605 10.1063/1.1564060 10.1002/pssc.200673571 |
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Keywords | B1. ZnO B1. Oxides A3. Molecular beam epitaxy B1. Alloys B2. Semiconducting II–VI materials B2. Semiconducting quaternary alloys |
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References | Sharma, Narayan, Muth, Teng, Jin, Kvit, Kolbas, Holland (b0050) 1999; 75 Özgür, Alivov, Liu, Teke, Reshchikov, Doğan, Avrutin, Cho, Morkoç (b0005) 2005; 98 Ye, Mei, Liang, Liu, Azarov, Kuznetsov, Du (b0075) 2014; 47 Cordero, Gómez, Platero-Prats, Revés, Echeverría, Cremades, Barragán, Alvarez (b0060) 2008 Demchenko, Earles, Liu, Avrutin, Izyumskaya, Özgür, Morkoç (b0100) 2011; 84 Chu, Morshed, Li, Huang, Liu (b0115) 2011; 325 Kozuka, Tsukazaki, Kawasaki (b0010) 2014; 1 Yong, He, Su, Zhu, Tang, Pan (b0080) 2014; 608 Liu, Avrutin, Izyumskaya, Reshchikov, Özgür, Morkoç (b0095) 2010; 4 Šermukšnis, Liberis, Ramonas, Matulionis, Toporkov, Liu, Avrutin, Özgür, Morkoç (b0030) 2015; 117 Chen, Zhu, Su, Zhang, Chen, Ji, Xiang, Gui, Wu, Pan, Tang (b0070) 2013; 102 Pécz, El-Shaer, Bakin, Mofor, Waag, Stoemenos (b0110) 2006; 100 Toporkov, Ullah, Hafiz, Nakagawara, Avrutin, Morkoç, Özgür (b0090) 2016 Heyd, Scuseria, Ernzerhof (b0120) 2003; 118 Toporkov, Demchenko, Zolnai, Volk, Avrutin, Morkoç, Özgür (b0040) 2016; 119 Dean, Lange (b0135) 1999 Su, Zhu, Yong, Chen, Ji, Su, Gui, Pan, Xiang, Tang (b0015) 2014; 6 Ohtomo, Kawasaki, Koida, Masubuchi, Koinuma, Sakurai, Yoshida, Yasuda, Segawa (b0045) 1998; 72 Chen, Zhu, Su, Zhang, Xiang, Gui, Wu, Cao, Zhang, Wang, Tang (b0140) 2013; 577 Toporkov, Avrutin, Okur, Izyumskaya, Demchenko, Volk, Smith, Morkoç, Özgür (b0065) 2014; 402 Belmoubarik, Ohtani, Ohno (b0020) 2008; 92 Tsukazaki, Akasaka, Nakahara, Ohno, Ohno, Maryenko, Ohtomo, Kawasaki (b0025) 2010; 9 Du, Mei, Liu, Guo, Zhang, Hou, Zhang, Xue, Kuznetsov (b0055) 2009; 21 Sermuksnis, Liberis, Matulionis, Toporkov, Avrutin, Ozgur, Morkoc (b0035) 2015 El-Shaer, Mofor, Bakin, Kreye, Waag (b0105) 2005; 38 Ivanov, El-Shaer, Shubina, Listoshin, Bakin, Waag (b0125) 2007; 4 Zolnai, Toporkov, Volk, Demchenko, Okur, Szabó, Özgür, Morkoç, Avrutin, Kótai (b0085) 2015; 327 Kato, Sano, Miyamoto, Yao (b0130) 2005; 275 Belmoubarik (10.1016/j.jcrysgro.2017.03.028_b0020) 2008; 92 Du (10.1016/j.jcrysgro.2017.03.028_b0055) 2009; 21 Demchenko (10.1016/j.jcrysgro.2017.03.028_b0100) 2011; 84 Dean (10.1016/j.jcrysgro.2017.03.028_b0135) 1999 Chen (10.1016/j.jcrysgro.2017.03.028_b0070) 2013; 102 Zolnai (10.1016/j.jcrysgro.2017.03.028_b0085) 2015; 327 Kato (10.1016/j.jcrysgro.2017.03.028_b0130) 2005; 275 Chu (10.1016/j.jcrysgro.2017.03.028_b0115) 2011; 325 Heyd (10.1016/j.jcrysgro.2017.03.028_b0120) 2003; 118 Su (10.1016/j.jcrysgro.2017.03.028_b0015) 2014; 6 Ohtomo (10.1016/j.jcrysgro.2017.03.028_b0045) 1998; 72 Sharma (10.1016/j.jcrysgro.2017.03.028_b0050) 1999; 75 Šermukšnis (10.1016/j.jcrysgro.2017.03.028_b0030) 2015; 117 Toporkov (10.1016/j.jcrysgro.2017.03.028_b0040) 2016; 119 Toporkov (10.1016/j.jcrysgro.2017.03.028_b0065) 2014; 402 Pécz (10.1016/j.jcrysgro.2017.03.028_b0110) 2006; 100 El-Shaer (10.1016/j.jcrysgro.2017.03.028_b0105) 2005; 38 Ivanov (10.1016/j.jcrysgro.2017.03.028_b0125) 2007; 4 Özgür (10.1016/j.jcrysgro.2017.03.028_b0005) 2005; 98 Chen (10.1016/j.jcrysgro.2017.03.028_b0140) 2013; 577 Cordero (10.1016/j.jcrysgro.2017.03.028_b0060) 2008 Kozuka (10.1016/j.jcrysgro.2017.03.028_b0010) 2014; 1 Yong (10.1016/j.jcrysgro.2017.03.028_b0080) 2014; 608 Sermuksnis (10.1016/j.jcrysgro.2017.03.028_b0035) 2015 Tsukazaki (10.1016/j.jcrysgro.2017.03.028_b0025) 2010; 9 Ye (10.1016/j.jcrysgro.2017.03.028_b0075) 2014; 47 Toporkov (10.1016/j.jcrysgro.2017.03.028_b0090) 2016 Liu (10.1016/j.jcrysgro.2017.03.028_b0095) 2010; 4 |
References_xml | – volume: 75 start-page: 3327 year: 1999 end-page: 3329 ident: b0050 article-title: Optical and structural properties of epitaxial Mg publication-title: Appl. Phys. Lett. contributor: fullname: Holland – volume: 21 start-page: 4625 year: 2009 end-page: 4630 ident: b0055 article-title: Controlled growth of high-quality Zno-based films and fabrication of visible-blind and solar-blind ultra-violet detectors publication-title: Adv. Mater. contributor: fullname: Kuznetsov – volume: 608 start-page: 197 year: 2014 end-page: 201 ident: b0080 article-title: The wurtzite–rocksalt phase transition for a Be publication-title: J. Alloys Compd. contributor: fullname: Pan – volume: 6 start-page: 14152 year: 2014 end-page: 14158 ident: b0015 article-title: Wide range bandgap modulation based on ZnO-based alloys and fabrication of solar blind UV detectors with high rejection ratio publication-title: ACS Appl. Mater. Interfaces contributor: fullname: Tang – volume: 275 start-page: e2459 year: 2005 end-page: e2465 ident: b0130 article-title: Polarity control of ZnO on c-plane sapphire by plasma-assisted MBE publication-title: J. Cryst. Growth contributor: fullname: Yao – volume: 84 start-page: 075201 year: 2011 ident: b0100 article-title: Impurity complexes and conductivity of Ga-doped ZnO publication-title: Phys. Rev. B contributor: fullname: Morkoç – year: 2016 ident: b0090 article-title: Exciton localization and large Stokes shift in quaternary BeMgZnO grown by molecular beam epitaxy publication-title: Proc SPIE contributor: fullname: Özgür – volume: 4 start-page: 70 year: 2010 end-page: 72 ident: b0095 article-title: Highly conductive and optically transparent GZO films grown under metal-rich conditions by plasma assisted MBE publication-title: Phys. Status Solidi RRL – Rapid Res. Lett. contributor: fullname: Morkoç – volume: 325 start-page: 36 year: 2011 end-page: 40 ident: b0115 article-title: Smooth surface, low electron concentration, and high mobility ZnO films on c-plane sapphire publication-title: J. Cryst. Growth contributor: fullname: Liu – volume: 98 start-page: 041301 year: 2005 ident: b0005 article-title: A comprehensive review of ZnO materials and devices publication-title: J. Appl. Phys. contributor: fullname: Morkoç – volume: 119 start-page: 095311 year: 2016 ident: b0040 article-title: Lattice parameters and electronic structure of BeMgZnO quaternary solid solutions: experiment and theory publication-title: J. Appl. Phys. contributor: fullname: Özgür – start-page: 1 year: 2015 end-page: 4 ident: b0035 article-title: Hot-electron noise and energy relaxation in wurtzite ZnO publication-title: 2015 Int. Conf. Noise Fluct. ICNF contributor: fullname: Morkoc – volume: 100 start-page: 103506 year: 2006 ident: b0110 article-title: Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer publication-title: J. Appl. Phys. contributor: fullname: Stoemenos – volume: 38 start-page: 265 year: 2005 end-page: 271 ident: b0105 article-title: High-quality ZnO layers grown by MBE on sapphire publication-title: Superlattices Microstruct. contributor: fullname: Waag – volume: 72 start-page: 2466 year: 1998 ident: b0045 article-title: Mg publication-title: Appl. Phys. Lett. contributor: fullname: Segawa – volume: 1 start-page: 011303 year: 2014 ident: b0010 article-title: Challenges and opportunities of ZnO-related single crystalline heterostructures publication-title: Appl. Phys. Rev. contributor: fullname: Kawasaki – year: 1999 ident: b0135 article-title: Lange’s Handbook of Chemistry contributor: fullname: Lange – start-page: 2832 year: 2008 ident: b0060 article-title: Covalent radii revisited publication-title: Dalton Trans. contributor: fullname: Alvarez – volume: 9 start-page: 889 year: 2010 end-page: 893 ident: b0025 article-title: Observation of the fractional quantum Hall effect in an oxide publication-title: Nat. Mater. contributor: fullname: Kawasaki – volume: 118 start-page: 8207 year: 2003 end-page: 8215 ident: b0120 article-title: Hybrid functionals based on a screened Coulomb potential publication-title: J. Chem. Phys. contributor: fullname: Ernzerhof – volume: 117 start-page: 065704 year: 2015 ident: b0030 article-title: Hot-electron energy relaxation time in Ga-doped ZnO films publication-title: J. Appl. Phys. contributor: fullname: Morkoç – volume: 402 start-page: 60 year: 2014 end-page: 64 ident: b0065 article-title: Enhancement of Be and Mg incorporation in wurtzite quaternary BeMgZnO alloys with up to 5.1 publication-title: J. Cryst. Growth contributor: fullname: Özgür – volume: 327 start-page: 43 year: 2015 end-page: 50 ident: b0085 article-title: Nondestructive atomic compositional analysis of BeMgZnO quaternary alloys using ion beam analytical techniques publication-title: Appl. Surf. Sci. contributor: fullname: Kótai – volume: 47 start-page: 175102 year: 2014 ident: b0075 article-title: Beryllium sites in MBE-grown BeZnO alloy films publication-title: J. Phys. Appl. Phys. contributor: fullname: Du – volume: 577 start-page: 179 year: 2013 end-page: 182 ident: b0140 article-title: Suppression of oxygen vacancies in Be alloyed ZnO publication-title: J. Alloys Compd. contributor: fullname: Tang – volume: 4 start-page: 154 year: 2007 end-page: 157 ident: b0125 article-title: Growth kinetics and properties of ZnO/ZnMgO hetero- structures grown by radical-source molecular beam epitaxy publication-title: Phys. Status Solidi C contributor: fullname: Waag – volume: 102 start-page: 202103 year: 2013 ident: b0070 article-title: Formation behavior of Be publication-title: Appl. Phys. Lett. contributor: fullname: Tang – volume: 92 start-page: 191906 year: 2008 ident: b0020 article-title: Intersubband transitions in ZnO multiple quantum wells publication-title: Appl. Phys. Lett. contributor: fullname: Ohno – volume: 402 start-page: 60 year: 2014 ident: 10.1016/j.jcrysgro.2017.03.028_b0065 article-title: Enhancement of Be and Mg incorporation in wurtzite quaternary BeMgZnO alloys with up to 5.1eV optical bandgap publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2014.04.028 contributor: fullname: Toporkov – volume: 98 start-page: 041301 year: 2005 ident: 10.1016/j.jcrysgro.2017.03.028_b0005 article-title: A comprehensive review of ZnO materials and devices publication-title: J. Appl. Phys. doi: 10.1063/1.1992666 contributor: fullname: Özgür – start-page: 2832 year: 2008 ident: 10.1016/j.jcrysgro.2017.03.028_b0060 article-title: Covalent radii revisited publication-title: Dalton Trans. doi: 10.1039/b801115j contributor: fullname: Cordero – volume: 47 start-page: 175102 year: 2014 ident: 10.1016/j.jcrysgro.2017.03.028_b0075 article-title: Beryllium sites in MBE-grown BeZnO alloy films publication-title: J. Phys. Appl. Phys. doi: 10.1088/0022-3727/47/17/175102 contributor: fullname: Ye – year: 1999 ident: 10.1016/j.jcrysgro.2017.03.028_b0135 contributor: fullname: Dean – volume: 92 start-page: 191906 year: 2008 ident: 10.1016/j.jcrysgro.2017.03.028_b0020 article-title: Intersubband transitions in ZnO multiple quantum wells publication-title: Appl. Phys. Lett. doi: 10.1063/1.2926673 contributor: fullname: Belmoubarik – volume: 4 start-page: 70 year: 2010 ident: 10.1016/j.jcrysgro.2017.03.028_b0095 article-title: Highly conductive and optically transparent GZO films grown under metal-rich conditions by plasma assisted MBE publication-title: Phys. Status Solidi RRL – Rapid Res. Lett. doi: 10.1002/pssr.200903410 contributor: fullname: Liu – volume: 6 start-page: 14152 year: 2014 ident: 10.1016/j.jcrysgro.2017.03.028_b0015 article-title: Wide range bandgap modulation based on ZnO-based alloys and fabrication of solar blind UV detectors with high rejection ratio publication-title: ACS Appl. Mater. Interfaces doi: 10.1021/am503427u contributor: fullname: Su – volume: 9 start-page: 889 year: 2010 ident: 10.1016/j.jcrysgro.2017.03.028_b0025 article-title: Observation of the fractional quantum Hall effect in an oxide publication-title: Nat. Mater. doi: 10.1038/nmat2874 contributor: fullname: Tsukazaki – volume: 21 start-page: 4625 year: 2009 ident: 10.1016/j.jcrysgro.2017.03.028_b0055 article-title: Controlled growth of high-quality Zno-based films and fabrication of visible-blind and solar-blind ultra-violet detectors publication-title: Adv. Mater. doi: 10.1002/adma.200901108 contributor: fullname: Du – year: 2016 ident: 10.1016/j.jcrysgro.2017.03.028_b0090 article-title: Exciton localization and large Stokes shift in quaternary BeMgZnO grown by molecular beam epitaxy contributor: fullname: Toporkov – volume: 84 start-page: 075201 year: 2011 ident: 10.1016/j.jcrysgro.2017.03.028_b0100 article-title: Impurity complexes and conductivity of Ga-doped ZnO publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.84.075201 contributor: fullname: Demchenko – volume: 325 start-page: 36 year: 2011 ident: 10.1016/j.jcrysgro.2017.03.028_b0115 article-title: Smooth surface, low electron concentration, and high mobility ZnO films on c-plane sapphire publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2011.04.036 contributor: fullname: Chu – volume: 577 start-page: 179 year: 2013 ident: 10.1016/j.jcrysgro.2017.03.028_b0140 article-title: Suppression of oxygen vacancies in Be alloyed ZnO publication-title: J. Alloys Compd. doi: 10.1016/j.jallcom.2013.04.174 contributor: fullname: Chen – volume: 327 start-page: 43 year: 2015 ident: 10.1016/j.jcrysgro.2017.03.028_b0085 article-title: Nondestructive atomic compositional analysis of BeMgZnO quaternary alloys using ion beam analytical techniques publication-title: Appl. Surf. Sci. doi: 10.1016/j.apsusc.2014.11.067 contributor: fullname: Zolnai – volume: 100 start-page: 103506 year: 2006 ident: 10.1016/j.jcrysgro.2017.03.028_b0110 article-title: Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer publication-title: J. Appl. Phys. doi: 10.1063/1.2382669 contributor: fullname: Pécz – volume: 119 start-page: 095311 year: 2016 ident: 10.1016/j.jcrysgro.2017.03.028_b0040 article-title: Lattice parameters and electronic structure of BeMgZnO quaternary solid solutions: experiment and theory publication-title: J. Appl. Phys. doi: 10.1063/1.4942835 contributor: fullname: Toporkov – volume: 275 start-page: e2459 year: 2005 ident: 10.1016/j.jcrysgro.2017.03.028_b0130 article-title: Polarity control of ZnO on c-plane sapphire by plasma-assisted MBE publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2004.11.377 contributor: fullname: Kato – volume: 38 start-page: 265 year: 2005 ident: 10.1016/j.jcrysgro.2017.03.028_b0105 article-title: High-quality ZnO layers grown by MBE on sapphire publication-title: Superlattices Microstruct. doi: 10.1016/j.spmi.2005.08.025 contributor: fullname: El-Shaer – start-page: 1 year: 2015 ident: 10.1016/j.jcrysgro.2017.03.028_b0035 article-title: Hot-electron noise and energy relaxation in wurtzite ZnO contributor: fullname: Sermuksnis – volume: 1 start-page: 011303 year: 2014 ident: 10.1016/j.jcrysgro.2017.03.028_b0010 article-title: Challenges and opportunities of ZnO-related single crystalline heterostructures publication-title: Appl. Phys. Rev. doi: 10.1063/1.4853535 contributor: fullname: Kozuka – volume: 117 start-page: 065704 year: 2015 ident: 10.1016/j.jcrysgro.2017.03.028_b0030 article-title: Hot-electron energy relaxation time in Ga-doped ZnO films publication-title: J. Appl. Phys. doi: 10.1063/1.4907907 contributor: fullname: Šermukšnis – volume: 72 start-page: 2466 year: 1998 ident: 10.1016/j.jcrysgro.2017.03.028_b0045 article-title: MgxZn1−xO as a II–VI widegap semiconductor alloy publication-title: Appl. Phys. Lett. doi: 10.1063/1.121384 contributor: fullname: Ohtomo – volume: 608 start-page: 197 year: 2014 ident: 10.1016/j.jcrysgro.2017.03.028_b0080 article-title: The wurtzite–rocksalt phase transition for a BexMgyZn1−x−yO alloy: Be content vs Mg content publication-title: J. Alloys Compd. doi: 10.1016/j.jallcom.2014.04.122 contributor: fullname: Yong – volume: 75 start-page: 3327 year: 1999 ident: 10.1016/j.jcrysgro.2017.03.028_b0050 article-title: Optical and structural properties of epitaxial MgxZn1−xO alloys publication-title: Appl. Phys. Lett. doi: 10.1063/1.125340 contributor: fullname: Sharma – volume: 102 start-page: 202103 year: 2013 ident: 10.1016/j.jcrysgro.2017.03.028_b0070 article-title: Formation behavior of BexZn1−xO alloys grown by plasma-assisted molecular beam epitaxy publication-title: Appl. Phys. Lett. doi: 10.1063/1.4807605 contributor: fullname: Chen – volume: 118 start-page: 8207 year: 2003 ident: 10.1016/j.jcrysgro.2017.03.028_b0120 article-title: Hybrid functionals based on a screened Coulomb potential publication-title: J. Chem. Phys. doi: 10.1063/1.1564060 contributor: fullname: Heyd – volume: 4 start-page: 154 year: 2007 ident: 10.1016/j.jcrysgro.2017.03.028_b0125 article-title: Growth kinetics and properties of ZnO/ZnMgO hetero- structures grown by radical-source molecular beam epitaxy publication-title: Phys. Status Solidi C doi: 10.1002/pssc.200673571 contributor: fullname: Ivanov |
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Snippet | •VI/II ratio 1.0–0.6 is varied during the MBE growth of BeMgZnO epitaxial films.•Bandgap modulated from 4.0eV to 4.5eV.•The c lattice parameter changed from... Owing to its large bandgap covering the UV region of the optical spectrum, the quaternary BeMgZnO is of interest, particularly the collective effect Be and Mg... |
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SubjectTerms | A3. Molecular beam epitaxy Alloys B1. Alloys B1. Oxides B1. ZnO B2. Semiconducting II–VI materials B2. Semiconducting quaternary alloys Composition effects Enthalpy Epitaxial growth Evaporation Fluxes II-VI semiconductors Magnesium oxide Molecular beam epitaxy Oxygen Vapor pressure Wurtzite Zinc oxide |
Title | Effect of oxygen-to-metal flux ratio on incorporation of metal species into quaternary BeMgZnO grown by plasma-assisted molecular beam epitaxy |
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