Improved performance of mid-infrared superlattice light emitting diodes grown epitaxially on silicon
•Optical output of mid-infrared superlattice LEDs improved on silicon substrates.•Mid-IR SLEDs on Si perform better due to improved thermal management.•Mid-IR SLEDs on Si are limited mainly by Auger rather than defect scattering. InAs/GaSb mid-infrared superlattice light emitting diodes (SLEDs) were...
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| Published in: | Journal of crystal growth Vol. 507; pp. 46 - 49 |
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| Language: | English |
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| Abstract | •Optical output of mid-infrared superlattice LEDs improved on silicon substrates.•Mid-IR SLEDs on Si perform better due to improved thermal management.•Mid-IR SLEDs on Si are limited mainly by Auger rather than defect scattering.
InAs/GaSb mid-infrared superlattice light emitting diodes (SLEDs) were grown and fabricated on miscut (1 0 0) Si. Compared to growth on lattice-matched GaSb substrates, SLEDs performed better at typical operating conditions due to improved thermal management and substrate transparency, and in spite of decreased minority carrier lifetime due to defects, as determined through spectrally resolved photoluminescence and ultrafast differential transmission measurements on comparable photoluminescence samples. For the smallest device sizes, this benefit was negated due to increased device failure at high current densities. |
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| AbstractList | InAs/GaSb mid-infrared superlattice light emitting diodes (SLEDs) were grown and fabricated on miscut (1 0 0) Si. Compared to growth on lattice-matched GaSb substrates, SLEDs performed better at typical operating conditions due to improved thermal management and substrate transparency, and in spite of decreased minority carrier lifetime due to defects, as determined through spectrally resolved photoluminescence and ultrafast differential transmission measurements on comparable photoluminescence samples. For the smallest device sizes, this benefit was negated due to increased device failure at high current densities. •Optical output of mid-infrared superlattice LEDs improved on silicon substrates.•Mid-IR SLEDs on Si perform better due to improved thermal management.•Mid-IR SLEDs on Si are limited mainly by Auger rather than defect scattering. InAs/GaSb mid-infrared superlattice light emitting diodes (SLEDs) were grown and fabricated on miscut (1 0 0) Si. Compared to growth on lattice-matched GaSb substrates, SLEDs performed better at typical operating conditions due to improved thermal management and substrate transparency, and in spite of decreased minority carrier lifetime due to defects, as determined through spectrally resolved photoluminescence and ultrafast differential transmission measurements on comparable photoluminescence samples. For the smallest device sizes, this benefit was negated due to increased device failure at high current densities. |
| Author | Heise, R.L. Prineas, J.P. Bogh, C.L. Muhowski, A.J. Boggess, T.F. |
| Author_xml | – sequence: 1 givenname: A.J. surname: Muhowski fullname: Muhowski, A.J. organization: Department of Physics and Astronomy, Univeristy of Iowa, Iowa City, IA 52242, USA – sequence: 2 givenname: C.L. surname: Bogh fullname: Bogh, C.L. organization: Department of Physics and Astronomy, Univeristy of Iowa, Iowa City, IA 52242, USA – sequence: 3 givenname: R.L. surname: Heise fullname: Heise, R.L. organization: Department of Physics and Astronomy, Univeristy of Iowa, Iowa City, IA 52242, USA – sequence: 4 givenname: T.F. surname: Boggess fullname: Boggess, T.F. organization: Department of Physics and Astronomy, Univeristy of Iowa, Iowa City, IA 52242, USA – sequence: 5 givenname: J.P. surname: Prineas fullname: Prineas, J.P. email: john-prineas@uiowa.edu organization: Department of Physics and Astronomy, Univeristy of Iowa, Iowa City, IA 52242, USA |
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| CitedBy_id | crossref_primary_10_1016_j_optmat_2020_109783 crossref_primary_10_1016_j_jcrysgro_2022_126627 crossref_primary_10_1109_JPHOT_2019_2911433 crossref_primary_10_1063_5_0129196 crossref_primary_10_1109_JPHOT_2022_3160226 crossref_primary_10_1364_OME_474007 crossref_primary_10_1002_pssb_202200528 crossref_primary_10_15407_spqeo26_02_180 |
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| Keywords | A3. Superlattices B1. Antimonides B3. Light emitting diodes A3. Molecular beam epitaxy B3. Infrared devices |
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| Snippet | •Optical output of mid-infrared superlattice LEDs improved on silicon substrates.•Mid-IR SLEDs on Si perform better due to improved thermal management.•Mid-IR... InAs/GaSb mid-infrared superlattice light emitting diodes (SLEDs) were grown and fabricated on miscut (1 0 0) Si. Compared to growth on lattice-matched GaSb... |
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| SubjectTerms | A3. Molecular beam epitaxy A3. Superlattices B1. Antimonides B3. Infrared devices B3. Light emitting diodes Carrier lifetime Epitaxial growth Gallium antimonides Infrared radiation Lattice matching Light emitting diodes Minority carriers Organic light emitting diodes Photoluminescence Silicon Substrates Superlattices Thermal management |
| Title | Improved performance of mid-infrared superlattice light emitting diodes grown epitaxially on silicon |
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